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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Input Type | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Power - Max | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Test Condition | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | |
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Microsemi Corporation | IGBT 600V 78A 337W TO247 | TO-247-3 | POWER MOS 8™ | Tube | Standard | Through Hole | - | Obsolete | TO-247 [B] | 337W | 78A | 600V | 400V, 26A, 4.7 Ohm, 15V | PT | 1.6V @ 15V, 26A | 130A | 409µJ (on), 450µJ (off) | 128nC | 16ns/102ns | ||||
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Microsemi Corporation | IGBT 1200V 64A 357W TO264 | TO-264-3, TO-264AA | - | Tube | Standard | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-264 [L] | 357W | 64A | 1200V | 800V, 25A, 4.3 Ohm, 15V | NPT | 3V @ 15V, 25A | 75A | 1.315mJ (on), 1.515mJ (off) | 170nC | 14ns/185ns | ||||
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Microsemi Corporation | IGBT 1200V 32A 200W TO247 | TO-247-3 | - | Tube | Standard | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247 [B] | 200W | 32A | 1200V | - | NPT | 3.2V @ 15V, 15A | 64A | 2.7mJ | 95nC | 17ns/105ns | ||||
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Microsemi Corporation | IGBT 1200V 36A 200W TO247 | TO-247-3 | - | Tube | Standard | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247 [B] | 200W | 36A | 1200V | 800V, 15A, 4.3 Ohm, 15V | NPT | 3.2V @ 15V, 15A | 64A | 895µJ (on), 840µJ (off) | 100nC | 10ns/120ns | ||||
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Microsemi Corporation | IGBT 1200V 25A 156W TO220 | TO-220-3 | - | Tube | Standard | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220 [K] | 156W | 25A | 1200V | 800V, 8A, 10 Ohm, 15V | NPT | 3V @ 15V, 8A | 44A | 300µJ (on), 285µJ (off) | 65nC | 7ns/100ns |