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IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Number of Channels | Breakdown Voltage | Clamping Voltage | Test Current | Continuous Collector Current | Response Time | Output Current | Quiescent Current | Reference Voltage | Dropout Voltage | Peak Pulse Current | Gain Bandwidth Product | Input Capacitance | Drain to Source Voltage (Vdss) | Peak Pulse Power | Collector Emitter Saturation Voltage | Max Breakdown Voltage | Max Forward Surge Current (Ifsm) | Min Supply Voltage | Reverse Standoff Voltage | Power Dissipation | Collector Emitter Voltage (VCEO) | Nominal Supply Current | Emitter Base Voltage (VEBO) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | hFE Min | Case/Package | Forward Voltage | Min Breakdown Voltage | Zener Voltage | Max Junction Temperature (Tj) | Collector Base Voltage (VCBO) | Lifecycle Status | Reverse Recovery Time | Max Repetitive Reverse Voltage (Vrrm) | Max Supply Voltage | |
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10,672
In-stock
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Taiwan Semiconductor | 2.0 | 51 V | 70.1 V | 2.5 mA | 250 mA | 1.25 V | 400 mV | 21.4 A | 1 MHz | 1.5 kW | 9.8 V | 2.5 A | 3 V | 24 V | 150 mW | 50 V | 25 nA | 40 V | SOT-89 | 1 V | 25.4 V | 75 V | 50 ns | 250 V | 12 V |