- Series :
- Packaging :
- Mounting Type :
- Part Status :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
-
- 1.1V @ 1.5A (2)
- 1.1V @ 1A (6)
- 1.25V @ 150mA (4)
- 1.3V @ 1A (6)
- 1.3V @ 800mA (12)
- 1.55V @ 5A (2)
- 1.7V @ 1A (2)
- 1.7V @ 6A (2)
- 1V @ 100mA (2)
- 1V @ 1A (2)
- 450mV @ 1A (2)
- 460mV @ 10A (2)
- 520mV @ 1A (2)
- 550mV @ 1A (4)
- 550mV @ 3A (2)
- 550mV @ 5A (2)
- 560mV @ 15A (2)
- 580mV @ 20A (2)
- 600mV @ 2A (2)
- 640mV @ 20A (2)
- 780mV @ 12A (2)
- 850mV @ 1A (2)
- 850mV @ 3A (6)
- 950mV @ 2A (2)
- 950mV @ 3A (2)
- 985mV @ 8A (2)
- Current - Reverse Leakage @ Vr :
-
- 100µA @ 100V (6)
- 100µA @ 150V (4)
- 10µA @ 400V (2)
- 10µA @ 800V (2)
- 150µA @ 40V (2)
- 1µA @ 400V (2)
- 1µA @ 75V (2)
- 20µA @ 100V (2)
- 2mA @ 50V (2)
- 300µA @ 45V (2)
- 300µA @ 80V (2)
- 30nA @ 25V (2)
- 400µA @ 20V (2)
- 400µA @ 40V (2)
- 500µA @ 120V (2)
- 500µA @ 20V (2)
- 500µA @ 40V (2)
- 500µA @ 60V (2)
- 50µA @ 40V (2)
- 5µA @ 1000V (10)
- 5µA @ 100V (6)
- 5µA @ 200V (2)
- 5µA @ 30V (2)
- 5µA @ 400V (2)
- 5µA @ 600V (8)
- 5µA @ 75V (2)
- 5µA @ 800V (2)
- Operating Temperature - Junction :
- Applied Filters :
0 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A SMA-FL | DO-221AC, SMA Flat Leads | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | SMA-FL | Standard | 600V | 1.7V @ 1A | 35ns | 5µA @ 600V | -55°C ~ 150°C | 1A | 9pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 5A DO201AD | DO-201AD, Axial | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Standard | 400V | 1.55V @ 5A | 20ns | 10µA @ 400V | -55°C ~ 175°C | 5A | - | |||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 20V 5A DO214AA | DO-214AA, SMB | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DO-214AA (SMB) | Schottky | 20V | 550mV @ 5A | - | 500µA @ 20V | -55°C ~ 150°C | 5A | - | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 800MA SUBSMA | DO-219AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | 100V | 1.3V @ 800mA | 150ns | 5µA @ 100V | -55°C ~ 150°C | 800mA | 10pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 1A DO204AL | DO-204AL, DO-41, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-204AL (DO-41) | Schottky | 100V | 850mV @ 1A | - | 100µA @ 100V | -55°C ~ 150°C | 1A | - | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800MA SUB SMA | DO-219AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | - | 1.3V @ 800mA | 500ns | 5µA @ 1000V | -55°C ~ 150°C | 800mA | 10pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 40V 1A SUB SMA | DO-219AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Schottky | 40V | 550mV @ 1A | - | 400µA @ 40V | -55°C ~ 125°C | 1A | - | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800MA SUB SMA | DO-219AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | - | 1.3V @ 800mA | 500ns | 5µA @ 1000V | -55°C ~ 150°C | 800mA | 10pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 800MA SUBSMA | DO-219AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | 200V | 1.3V @ 800mA | 150ns | 5µA @ 200V | -55°C ~ 150°C | 800mA | 10pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 800MA SUBSMA | DO-219AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | 600V | 1.3V @ 800mA | 250ns | 5µA @ 600V | -55°C ~ 150°C | 800mA | 10pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A DO214AC | DO-214AC, SMA | - | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Active | DO-214AC (SMA) | Standard | 400V | 1.1V @ 1A | 1.5µs | 1µA @ 400V | -55°C ~ 175°C | 1A | 12pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A SUB SMA | DO-219AB | - | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | 600V | 1.1V @ 1A | 1.8µs | 5µA @ 600V | -55°C ~ 175°C | 1A | 9pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A DO201AD | DO-201AD, Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Standard | 600V | 1.7V @ 6A | 35ns | 5µA @ 600V | -55°C ~ 150°C | 6A | 50pF @ 4V, 1MHz | ||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 40V 1A MICRO SMA | 2-SMD, Flat Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Micro SMA | Schottky | 40V | 550mV @ 1A | - | 50µA @ 40V | -55°C ~ 150°C | 1A | 50pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 80V 20A SMPC4.0 | TO-277, 3-PowerDFN | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMPC4.0 | Schottky | 80V | 640mV @ 20A | - | 300µA @ 80V | -55°C ~ 150°C | 20A | - | |||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 45V 10A TO277A | TO-277, 3-PowerDFN | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-277A (SMPC) | Schottky | 45V | 460mV @ 10A | - | 300µA @ 45V | -55°C ~ 150°C | 10A | - | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 8A DO214AB | DO-214AB, SMC | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Not For New Designs | DO-214AB (SMC) | Standard | 800V | 985mV @ 8A | - | 10µA @ 800V | -55°C ~ 150°C | 8A | 48pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 1KV 1A DO214AC | DO-214AC, SMA | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DO-214AC (SMA) | Standard | 1000V | 1.3V @ 1A | 500ns | 5µA @ 1000V | -55°C ~ 150°C | 1A | 10pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 800MA SUBSMA | DO-219AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | 100V | 1.3V @ 800mA | 150ns | 5µA @ 100V | -55°C ~ 150°C | 800mA | 10pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 60V 20A 8PDFN | 8-PowerTDFN | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | 8-PDFN (5x6) | Schottky | 60V | 580mV @ 20A | - | 500µA @ 60V | -55°C ~ 150°C | 20A | - | |||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 50V 15A SMPC4.0 | TO-277, 3-PowerDFN | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMPC4.0 | Schottky | 50V | 560mV @ 15A | - | 2mA @ 50V | -55°C ~ 150°C | 15A | - | |||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 3A DO214AA | DO-214AA, SMB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DO-214AA (SMB) | Schottky | 100V | 850mV @ 3A | - | 100µA @ 100V | -55°C ~ 150°C | 3A | - | |||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 150V 3A DO214AC | DO-214AC, SMA | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DO-214AC (SMA) | Schottky | 150V | 950mV @ 3A | - | 100µA @ 150V | -55°C ~ 150°C | 3A | - | |||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 3A DO214AC | DO-214AC, SMA | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DO-214AC (SMA) | Schottky | 100V | 850mV @ 3A | - | 100µA @ 100V | -55°C ~ 150°C | 3A | - | |||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 150V 2A DO214AC | DO-214AC, SMA | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DO-214AC (SMA) | Schottky | 150V | 950mV @ 2A | - | 100µA @ 150V | -55°C ~ 150°C | 2A | - | |||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 3A SOD123W | SOD-123W | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SOD123W | Schottky | 100V | 850mV @ 3A | - | 20µA @ 100V | -55°C ~ 150°C | 3A | - | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A DO214AC | DO-214AC, SMA | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DO-214AC (SMA) | Standard | 400V | 1V @ 1A | 50ns | 5µA @ 400V | -55°C ~ 150°C | 1A | 15pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 30V 1A MICRO SMA | 2-SMD, Flat Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Micro SMA | Schottky | 30V | 520mV @ 1A | - | 5µA @ 30V | -55°C ~ 150°C | 1A | 50pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 40V 2A MICRO SMA | 2-SMD, Flat Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Micro SMA | Schottky | 40V | 600mV @ 2A | - | 150µA @ 40V | -55°C ~ 150°C | 2A | 35pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 1KV 1.5A DO214AC | DO-214AC, SMA | - | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Active | DO-214AC (SMA) | Standard | 1000V | 1.1V @ 1.5A | 1.5µs | 5µA @ 1000V | -55°C ~ 150°C | 1.5A | 30pF @ 4V, 1MHz |