- Mounting Type :
- Supplier Device Package :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
34 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 131pF @ 1V, 1MHz | |||||
|
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 131pF @ 1V, 1MHz | |||||
|
|
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 131pF @ 1V, 1MHz | |||||
|
|
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 131pF @ 1V, 1MHz | |||||
|
|
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 131pF @ 1V, 1MHz | |||||
|
|
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 131pF @ 1V, 1MHz | |||||
|
|
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz |