- Series :
- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
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0 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Infineon Technologies | DIODE SCHOTTKY 600V TO220-2 | - | - | - | - | - | Obsolete | - | - | - | - | - | - | - | - | - | ||||
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Infineon Technologies | DIODE GEN PURP 600V 21A TO22FP | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | PG-TO220-2 Full Pack | Standard | 600V | 2.05V @ 30A | 130ns | 40µA @ 600V | -55°C ~ 175°C | 21A | - | ||||
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Infineon Technologies | DIODE GEN PURP 600V 14.7A TO220 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Standard | 600V | 2V @ 6A | 70ns | 50µA @ 600V | -55°C ~ 175°C | 14.7A (DC) | - | ||||
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Infineon Technologies | DIODE GEN PURP 1.2KV 11.2A TO220 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Standard | 1200V | 2.15V @ 4A | 115ns | 100µA @ 1200V | -55°C ~ 150°C | 11.2A (DC) | - | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.7V @ 8A | 0ns | 300µA @ 600V | -55°C ~ 175°C | 8A (DC) | 280pF @ 0V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 4A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolSiC™ | No Recovery Time > 500mA (Io) | Surface Mount | Obsolete | P-TO252-3 | Silicon Carbide Schottky | 600V | 1.9V @ 4A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 4A (DC) | 150pF @ 0V, 1MHz | |||||
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Infineon Technologies | DIODE SCHOTTKY 600V 6A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolSiC™ | No Recovery Time > 500mA (Io) | Surface Mount | Obsolete | D²PAK | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 6A (DC) | 300pF @ 0V, 1MHz | |||||
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Infineon Technologies | DIODE SCHOTTKY 45V 750MA SC79-2 | SC-79, SOD-523 | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | PG-SC79-2 | Schottky | 45V | 600mV @ 200mA | - | 10µA @ 45V | 150°C (Max) | 750mA (DC) | 10pF @ 10V, 1MHz | |||||
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Infineon Technologies | DIODE SCHOTTKY 600V 12A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.7V @ 12A | 0ns | 400µA @ 600V | -55°C ~ 175°C | 12A (DC) | 450pF @ 1V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 300V 10A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 300V | 1.7V @ 10A | 0ns | 200µA @ 300V | -55°C ~ 175°C | 10A (DC) | 600pF @ 0V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 6A (DC) | 300pF @ 0V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 4A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.9V @ 4A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 4A (DC) | 150pF @ 0V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220AB | TO-220-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | P-TO220AB | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 6A (DC) | 300pF @ 0V, 1MHz |