- Mounting Type :
- Supplier Device Package :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
-
- 1085pF @ 1V, 100kHz (8)
- 1220pF @ 1V, 100KHz (6)
- 1260pF @ 1V, 100kHz (2)
- 1705pF @ 1V, 100kHz (4)
- 2250pF @ 1V, 100kHz (2)
- 2530pF @ 1V, 100kHz (2)
- 2560pF @ 1V, 100kHz (2)
- 361pF @ 1V, 100kHz (8)
- 421pF @ 1V, 100kHz (4)
- 463pF @ 1V, 100kHz (8)
- 538pF @ 1V, 100kHz (4)
- 575pF @ 1V, 100kHz (10)
- 612pF @ 1V, 100kHz (10)
- 665pF @ 1V, 100kHz (4)
- 887pF @ 1V, 100kHz (8)
- 936pF @ 1V, 100kHz (4)
- Applied Filters :
44 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ON Semiconductor | 1200V 40A SIC SBD | TO-247-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 61A (DC) | 2250pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 30A SIC SBD GEN1.5 | TO-247-2 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | 1.7V @ 30A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 37A (DC) | 1260pF @ 1V, 100kHz | |||||
|
ON Semiconductor | 650V 30A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 23A (DC) | 887pF @ 1V, 100kHz | |||||
|
ON Semiconductor | 1200V 20A AUTO SIC SBD | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 15A (DC) | 612pF @ 1V, 100kHz | |||||
|
ON Semiconductor | 650V 20A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 13A (DC) | 575pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 16A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 11A (DC) | 463pF @ 1V, 100kHz | |||||
|
ON Semiconductor | 1200V 10A SIC SBD | TO-247-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | 1.75V @ 10A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 17A (DC) | 612pF @ 1V, 100kHz | |||||
|
ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz | |||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 5A | 0ns | 200µA @ 1200V | - | - | - | |||||
|
ON Semiconductor | 650V 8A SIC SBD | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8A (DC) | 463pF @ 1V, 100kHz | |||||
|
ON Semiconductor | 650V 8A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D-PAK (TO-252) | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 463pF @ 1V, 100kHz | |||||
|
ON Semiconductor | 650V 6A SIC SBD | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 6A (DC) | 361pF @ 1V, 100kHz | |||||
|
ON Semiconductor | 650V 6A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D-PAK (TO-252) | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 11A (DC) | 361pF @ 1V, 100kHz | |||||
|
ON Semiconductor | 1200V 50A SIC SBD | TO-247-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 77A (DC) | 2560pF @ 1V, 100kHz | |||||
|
ON Semiconductor | DIODE SCHOTTKY 650V TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8.8A (DC) | 361pF @ 1V, 100kHz | |||||
|
ON Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 1220pF @ 1V, 100KHz | |||||
|
ON Semiconductor | DIODE SCHOTTKY 1.2KV TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252, (D-Pak) | Silicon Carbide Schottky | 1200V | 1.75V @ 10A | 0ns | 200µA @ 1200V | - | - | 612pF @ 1V, 100kHz | ||||||
|
ON Semiconductor | 1200V 8A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252, (D-Pak) | Silicon Carbide Schottky | 1200V | 1.75V @ 8A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 22.5A (DC) | 538pF @ 1V, 100kHz | ||||||
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ON Semiconductor | 650V 10A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D-PAK (TO-252) | Silicon Carbide Schottky | 650V | 1.75V @ 10A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 18A (DC) | 575pF @ 1V, 100kHz | ||||||
|
ON Semiconductor | 1200V 20A AUTO SIC SBD | TO-247-2 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 30A (DC) | 1220pF @ 1V, 100KHz | |||||
|
ON Semiconductor | 650V 50A SIC SBD | TO-247-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | 1.75V @ 50A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 60A (DC) | 2530pF @ 1V, 100kHz | |||||
|
ON Semiconductor | DIODE SCHOTTKY 1.2KV 30A TO247-2 | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | 1.75V @ 20A | 0ns | 200µA @ 1200V | - | 30A (DC) | 1220pF @ 1V, 100KHz | |||||
|
ON Semiconductor | 650V 30A SIC SBD | TO-247-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 26A (DC) | 1705pF @ 1V, 100kHz | |||||
|
ON Semiconductor | 1200V 10A AUTO SIC SBD | TO-247-2 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 17A (DC) | 612pF @ 1V, 100kHz | |||||
|
ON Semiconductor | DIODE SCHOTTKY 650V 30A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 30A | - | 200µA @ 650V | -55°C ~ 175°C | 30A (DC) | 1705pF @ 1V, 100kHz | |||||
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ON Semiconductor | 1200V 15A SIC SBD | TO-247-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | 1.75V @ 15A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 26A (DC) | 936pF @ 1V, 100kHz | |||||
|
ON Semiconductor | 650V 20A SIC SBD | TO-247-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 25A (DC) | 1085pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 20A SIC SBD | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 20A (DC) | 1085pF @ 1V, 100kHz | |||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 15A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 15A | - | 200µA @ 1200V | -55°C ~ 175°C | 15A (DC) | 936pF @ 1V, 100kHz | |||||
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ON Semiconductor | DIODE SCHOTTKY 650V 25A TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.75V @ 20A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 25A (DC) | 1085pF @ 1V, 100kHz |