- Package / Case :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ON Semiconductor | 650V 30A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 23A (DC) | 887pF @ 1V, 100kHz | ||||
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ON Semiconductor | 1200V 20A AUTO SIC SBD | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 15A (DC) | 612pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 20A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 13A (DC) | 575pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 16A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 11A (DC) | 463pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE GEN PURP 400V 60A TO247 | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247 | Standard | 400V | 1.3V @ 60A | 85ns | 100µA @ 400V | -65°C ~ 150°C | 60A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V 13A TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 13A (DC) | 463pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE GEN PURP 600V 60A TO247 | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247 | Standard | 600V | 1.7V @ 60A | 80ns | 100µA @ 600V | -65°C ~ 150°C | 60A | - | ||||
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ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz |