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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | RoHS | |
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WeEn Semiconductors | BYC15-1200PQ/TO-220AC/STANDARD M | TO-220-2 | - | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 1200V | 3.2V @ 15A | 61ns | 100µA @ 1200V | 175°C (Max) | 15A | - | |||||
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WeEn Semiconductors | BYC8-1200PQ/TO-220AC/STANDARD MA | TO-220-2 | - | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 1200V | 3.2V @ 8A | 55ns | 100µA @ 1200V | 175°C (Max) | 8A | - | |||||
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WeEn Semiconductors | DIODE GEN PURP 600V 9A TO220F | TO-220-2 Full Pack | - | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220F | Standard | 600V | 1.3V @ 8A | 75ns | 10µA @ 600V | 175°C (Max) | 9A | - | |||||
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WeEn Semiconductors | DIODE SCHOTTKY 650V 4A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D2PAK | Silicon Carbide Schottky | 650V | 1.7V @ 4A | 0ns | 170µA @ 650V | 175°C (Max) | 4A | 130pF @ 1V, 1MHz | ||||||
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WeEn Semiconductors | DIODE GEN PURP 600V 10A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 600V | 1.8V @ 10A | 19ns | - | 150°C (Max) | 10A | - |