- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
-
- 1.55V @ 10A (2)
- 1.55V @ 12A (2)
- 1.55V @ 15A (2)
- 1.55V @ 20A (4)
- 1.55V @ 5A (2)
- 1.55V @ 6A (2)
- 1.55V @ 8A (2)
- 1.5V @ 10A (4)
- 1.5V @ 15A (2)
- 1.5V @ 2A (4)
- 1.5V @ 30A (2)
- 1.5V @ 4A (4)
- 1.5V @ 6A (4)
- 1.5V @ 8A (4)
- 1.6V @ 10A (2)
- 1.6V @ 15A (2)
- 1.6V @ 20A (2)
- 1.6V @ 50A (2)
- 1.6V @ 5A (2)
- 1.6V @ 80A (2)
- 1.7V @ 10A (4)
- 1.7V @ 30A (2)
- 1.8V @ 15A (2)
- 1.9V @ 80A (2)
- 1V @ 3A (10)
- 2.1V @ 30A (2)
- 2.1V @ 50A (2)
- 2.1V @ 8A (2)
- 2.3V @ 15A (2)
- 2V @ 2A (2)
- Current - Reverse Leakage @ Vr :
-
- 10.8µA @ 650V (4)
- 100µA @ 1000V (4)
- 100µA @ 1200V (2)
- 100µA @ 600V (4)
- 100µA @ 650V (6)
- 10µA @ 400V (2)
- 10µA @ 600V (2)
- 120µA @ 600V (2)
- 160µA @ 600V (2)
- 1µA @ 2000V (4)
- 1µA @ 200V (2)
- 1µA @ 400V (2)
- 1µA @ 600V (2)
- 1µA @ 800V (2)
- 200µA @ 1200V (8)
- 200µA @ 600V (2)
- 20µA @ 650V (4)
- 240µA @ 600V (2)
- 250µA @ 600V (10)
- 250µA @ 80V (2)
- 300µA @ 1200V (2)
- 300µA @ 600V (2)
- 30µA @ 650V (4)
- 400µA @ 1200V (2)
- 400µA @ 600V (2)
- 40µA @ 650V (10)
- 50µA @ 650V (4)
- 60µA @ 650V (4)
- 75µA @ 650V (4)
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
-
- 1000pF @ 1V, 1MHz (4)
- 1060pF @ 1V, 1MHz (2)
- 110pF @ 1V, 1MHz (4)
- 1220pF @ 1V, 100KHz (2)
- 1260pF @ 1V, 100kHz (2)
- 200pF @ 1V, 1MHz (4)
- 219pF @ 1V, 1MHz (2)
- 270pF @ 1V, 1MHz (2)
- 291pF @ 1V, 1MHz (2)
- 300pF @ 1V, 1MHz (4)
- 365pF @ 1V, 1MHz (2)
- 400pF @ 1V, 1MHz (4)
- 421pF @ 1V, 100kHz (4)
- 438pF @ 1V, 1MHz (2)
- 480pF @ 0V, 1MHz (2)
- 500pF @ 1V, 1MHz (4)
- 550pF @ 1V, 1MHz (4)
- 600pF @ 1V, 1MHz (4)
- 612pF @ 1V, 100kHz (4)
- 730pF @ 1V, 1MHz (2)
- 750pF @ 1V, 1MHz (4)
- 790pF @ 1V, 1MHz (2)
- 92pF @ 5V, 1MHz (10)
51 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
Semtech Corporation | DIODE GEN PURP 1KV 5A AXIAL | Axial | Automotive, AEC-Q101 | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 1000V | 1V @ 3A | 2µs | 1µA @ 2000V | - | 5A | 92pF @ 5V, 1MHz | ||||
|
|
|
Semtech Corporation | DIODE GEN PURP 800V 5A AXIAL | Axial | Automotive, AEC-Q101 | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 800V | 1V @ 3A | 2µs | 1µA @ 800V | - | 5A | 92pF @ 5V, 1MHz | ||||
|
|
|
Semtech Corporation | DIODE GEN PURP 600V 5A AXIAL | Axial | Automotive, AEC-Q101 | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 600V | 1V @ 3A | 2µs | 1µA @ 600V | - | 5A | 92pF @ 5V, 1MHz | ||||
|
|
|
Semtech Corporation | DIODE GEN PURP 400V 5A AXIAL | Axial | Automotive, AEC-Q101 | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 400V | 1V @ 3A | 2µs | 1µA @ 400V | - | 5A | 92pF @ 5V, 1MHz | ||||
|
|
|
Semtech Corporation | DIODE GEN PURP 200V 5A AXIAL | Axial | Automotive, AEC-Q101 | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 200V | 1V @ 3A | 2µs | 1µA @ 200V | - | 5A | 92pF @ 5V, 1MHz | ||||
|
|
|
Semtech Corporation | DIODE GEN PURP 2KV 2A AXIAL | Axial | Automotive, AEC-Q101 | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 2000V | 2V @ 2A | 2µs | 1µA @ 2000V | -65°C ~ 150°C | 2A | - | ||||
|
|
ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | - | 0ns | 75µA @ 650V | 175°C (Max) | 15A (DC) | 750pF @ 1V, 1MHz | ||||
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 6A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 6A | 0ns | 120µA @ 600V | 175°C (Max) | 6A (DC) | 219pF @ 1V, 1MHz | ||||
|
|
ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 4A | 0ns | 20µA @ 650V | 175°C (Max) | 4A (DC) | 200pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 10A | 0ns | 50µA @ 650V | 175°C (Max) | 10A (DC) | 500pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 8A | 0ns | 40µA @ 650V | 175°C (Max) | 8A (DC) | 400pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 6A | 0ns | 30µA @ 650V | 175°C (Max) | 6A (DC) | 300pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 2A | 0ns | 10.8µA @ 650V | 175°C (Max) | 2.15A (DC) | 110pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 1200V 20A TO220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 20A | 0ns | 400µA @ 1200V | 175°C (Max) | 20A (DC) | 1060pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 1200V 15A TO220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 15A | 0ns | 300µA @ 1200V | 175°C (Max) | 15A (DC) | 790pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 1200V 10A TO220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 200µA @ 1200V | 175°C (Max) | 10A (DC) | 550pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | - | 0ns | 100µA @ 650V | 175°C (Max) | 20A (DC) | 1000pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 15A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 15A | 0ns | 300µA @ 600V | 175°C (Max) | 15A (DC) | 550pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 10A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 10A | 0ns | 200µA @ 600V | 175°C (Max) | 10A (DC) | 365pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | - | 0ns | 60µA @ 650V | 175°C (Max) | 12A (DC) | 600pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 1200V 5A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 5A | 0ns | 100µA @ 1200V | 175°C (Max) | 5A (DC) | 270pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 8A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 8A | 0ns | 160µA @ 600V | 175°C (Max) | 8A (DC) | 291pF @ 1V, 1MHz | ||||
.jpg)
|
|
ROHM Semiconductor | DIODE GEN PURP 600V 20A TO220NFM | TO-220-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 1.55V @ 20A | 60ns | 10µA @ 600V | 150°C (Max) | 20A | - | ||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 20A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A (DC) | 730pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 12A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 12A | 0ns | 240µA @ 600V | 175°C (Max) | 12A (DC) | 438pF @ 1V, 1MHz | ||||
|
|
|
ON Semiconductor | 650V 30A SIC SBD GEN1.5 | TO-247-2 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | 1.7V @ 30A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 37A (DC) | 1260pF @ 1V, 100kHz | ||||
|
|
ON Semiconductor | 1200V 20A AUTO SIC SBD | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 15A (DC) | 612pF @ 1V, 100kHz | ||||
|
|
|
ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz | ||||
|
|
ON Semiconductor | DIODE GEN PURP 1KV 80A TO247-2 | TO-247-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 1000V | 1.9V @ 80A | 200ns | 250µA @ 80V | -65°C ~ 175°C | 80A | - | ||||
|
|
ON Semiconductor | DIODE GEN PURP 600V 30A TO247-2 | TO-247-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 600V | 1.5V @ 30A | 80ns | 250µA @ 600V | -55°C ~ 175°C | 30A | - |