- Manufacture :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
27 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 520V 5A TO220FP | TO-220-2 Full Pack | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220FP | Standard | 520V | 1.15V @ 5A | 95ns | 5µA @ 520V | -65°C ~ 175°C | 5A | - | |||||
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ON Semiconductor | DIODE GEN PURP 520V 5A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DPAK | Standard | 520V | 1.15V @ 5A | 95ns | 5µA @ 520V | -65°C ~ 175°C | 5A | - | ||||||
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ON Semiconductor | DIODE GEN PURP 520V 5A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DPAK | Standard | 520V | 1.15V @ 5A | 95ns | 5µA @ 520V | -65°C ~ 175°C | 5A | - | ||||||
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ON Semiconductor | DIODE GEN PURP 520V 5A TO220AC | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 520V | 1.15V @ 5A | 95ns | 5µA @ 520V | -65°C ~ 175°C | 5A | - | |||||
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ON Semiconductor | DIODE GEN PURP 520V 5A DO201AD | DO-201AA, DO-27, Axial | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 520V | 1.15V @ 5A | 95ns | 5µA @ 520V | -65°C ~ 175°C | 5A | - | ||||||
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ON Semiconductor | DIODE GEN PURP 520V 5A DO201AD | DO-201AA, DO-27, Axial | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 520V | 1.15V @ 5A | 95ns | 5µA @ 520V | -65°C ~ 175°C | 5A | - | ||||||
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ON Semiconductor | DIODE GEN PURP 520V 5A DO201AD | DO-201AA, DO-27, Axial | SWITCHMODE™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 520V | 1.15V @ 5A | 95ns | 5µA @ 520V | -65°C ~ 175°C | 5A | - | |||||
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ON Semiconductor | DIODE GEN PURP 520V 5A DO201AD | DO-201AA, DO-27, Axial | SWITCHMODE™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 520V | 1.15V @ 5A | 95ns | 5µA @ 520V | -65°C ~ 175°C | 5A | - | |||||
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ON Semiconductor | DIODE GEN PURP 300V 5A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DPAK | Standard | 300V | 1.05V @ 5A | 50ns | 5µA @ 300V | -65°C ~ 175°C | 5A | - | ||||||
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ON Semiconductor | DIODE SCHOTTKY 100V 5A 5DFN | 8-PowerTDFN, 5 Leads | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | 5-DFN (5x6) (8-SOFL) | Schottky | 100V | 730mV @ 5A | - | 100µA @ 100V | -55°C ~ 175°C | 5A | - | ||||||
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ON Semiconductor | DIODE SCHOTTKY 100V 5A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DPAK | Schottky | 100V | 710mV @ 5A | - | 3.5µA @ 100V | -65°C ~ 175°C | 5A | - | ||||||
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ON Semiconductor | DIODE GEN PURP 300V 5A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DPAK | Standard | 300V | 1.05V @ 5A | 50ns | 5µA @ 300V | -55°C ~ 175°C | 5A | - | ||||||
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ON Semiconductor | DIODE GEN PURP 520V 5A TO220FP | TO-220-2 Full Pack | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220FP | Standard | 520V | 1.15V @ 5A | 95ns | 5µA @ 520V | -65°C ~ 175°C | 5A | - |