- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
81 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE SCHOTTKY 650V 8A TO220AC | TO-220-2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 8A | 0ns | 160µA @ 600V | 175°C (Max) | 8A (DC) | 291pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 8A | 0ns | 40µA @ 650V | 175°C (Max) | 8A (DC) | 400pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SC SCHKY 650V 8A TO220ACP | TO-220-2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 8A | 0ns | 40µA @ 650V | 175°C (Max) | 8A (DC) | 400pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 8A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 8A | 0ns | 160µA @ 600V | 175°C (Max) | 8A (DC) | 291pF @ 1V, 1MHz | |||||
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SMC Diode Solutions | DIODE GEN PURP 1KV 2A DO15 | DO-204AC, DO-15, Axial | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-15 | Standard | 1000V | 1V @ 2A | - | 5µA @ 1000V | -65°C ~ 125°C | 2A | 20pF @ 4V, 1MHz | |||||
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SMC Diode Solutions | DIODE GEN PURP 800V 2A DO15 | DO-204AC, DO-15, Axial | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-15 | Standard | 800V | 1V @ 2A | - | 5µA @ 800V | -65°C ~ 125°C | 2A | 20pF @ 4V, 1MHz | |||||
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SMC Diode Solutions | DIODE GEN PURP 600V 2A DO15 | DO-204AC, DO-15, Axial | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-15 | Standard | 600V | 1V @ 2A | - | 5µA @ 600V | -65°C ~ 125°C | 2A | 20pF @ 4V, 1MHz | |||||
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SMC Diode Solutions | DIODE GEN PURP 400V 2A DO15 | DO-204AC, DO-15, Axial | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-15 | Standard | 400V | 1V @ 2A | - | 5µA @ 400V | -65°C ~ 125°C | 2A | 20pF @ 4V, 1MHz | |||||
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SMC Diode Solutions | DIODE GEN PURP 200V 2A DO15 | DO-204AC, DO-15, Axial | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-15 | Standard | 200V | 1V @ 2A | - | 5µA @ 200V | -65°C ~ 125°C | 2A | 20pF @ 4V, 1MHz | |||||
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SMC Diode Solutions | DIODE GEN PURP 100V 2A DO15 | DO-204AC, DO-15, Axial | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-15 | Standard | 100V | 1V @ 2A | - | 5µA @ 100V | -65°C ~ 125°C | 2A | 20pF @ 4V, 1MHz | |||||
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SMC Diode Solutions | DIODE GEN PURP 50V 2A DO15 | DO-204AC, DO-15, Axial | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-15 | Standard | 50V | 1V @ 2A | - | 5µA @ 50V | -65°C ~ 125°C | 2A | 20pF @ 4V, 1MHz | |||||
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SMC Diode Solutions | DIODE GEN PURP 1KV 2A DO15 | DO-204AC, DO-15, Axial | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-15 | Standard | 1000V | 1V @ 2A | - | 5µA @ 1000V | -65°C ~ 125°C | 2A | 20pF @ 4V, 1MHz | |||||
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SMC Diode Solutions | DIODE GEN PURP 800V 2A DO15 | DO-204AC, DO-15, Axial | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-15 | Standard | 800V | 1V @ 2A | - | 5µA @ 800V | -65°C ~ 125°C | 2A | 20pF @ 4V, 1MHz | |||||
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SMC Diode Solutions | DIODE GEN PURP 600V 2A DO15 | DO-204AC, DO-15, Axial | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-15 | Standard | 600V | 1V @ 2A | - | 5µA @ 600V | -65°C ~ 125°C | 2A | 20pF @ 4V, 1MHz | |||||
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SMC Diode Solutions | DIODE GEN PURP 400V 2A DO15 | DO-204AC, DO-15, Axial | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-15 | Standard | 400V | 1V @ 2A | - | 5µA @ 400V | -65°C ~ 125°C | 2A | 20pF @ 4V, 1MHz | |||||
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SMC Diode Solutions | DIODE GEN PURP 200V 2A DO15 | DO-204AC, DO-15, Axial | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-15 | Standard | 200V | 1V @ 2A | - | 5µA @ 200V | -65°C ~ 125°C | 2A | 20pF @ 4V, 1MHz | |||||
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SMC Diode Solutions | DIODE GEN PURP 100V 2A DO15 | DO-204AC, DO-15, Axial | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-15 | Standard | 100V | 1V @ 2A | - | 5µA @ 100V | -65°C ~ 125°C | 2A | 20pF @ 4V, 1MHz | |||||
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SMC Diode Solutions | DIODE GEN PURP 50V 2A DO15 | DO-204AC, DO-15, Axial | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-15 | Standard | 50V | 1V @ 2A | - | 5µA @ 50V | -65°C ~ 125°C | 2A | 20pF @ 4V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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Micro Commercial Co | DIODE GEN PURP 200V 2A DO15 | DO-204AC, DO-15, Axial | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-15 | Standard | 200V | 1V @ 2A | 50ns | 5µA @ 200V | -55°C ~ 150°C | 2A | - | |||||
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Micro Commercial Co | DIODE GEN PURP 100V 2A DO15 | DO-204AC, DO-15, Axial | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-15 | Standard | 100V | 1V @ 2A | 50ns | 5µA @ 100V | -55°C ~ 150°C | 2A | - | |||||
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Micro Commercial Co | DIODE GEN PURP 50V 2A DO15 | DO-204AC, DO-15, Axial | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-15 | Standard | 50V | 1V @ 2A | 50ns | 5µA @ 50V | -55°C ~ 150°C | 2A | - | |||||
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Micro Commercial Co | DIODE GEN PURP 1KV 2A DO15 | DO-204AC, DO-15, Axial | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-15 | Standard | 1000V | 1V @ 2A | - | 5µA @ 1000V | -55°C ~ 150°C | 2A | 20pF @ 4V, 1MHz | |||||
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Micro Commercial Co | DIODE GEN PURP 400V 2A DO15 | DO-204AC, DO-15, Axial | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-15 | Standard | 400V | 1V @ 2A | - | 5µA @ 400V | -55°C ~ 150°C | 2A | 20pF @ 4V, 1MHz |