- Manufacture :
- Package / Case :
- Diode Type :
- Current - Reverse Leakage @ Vr :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Speed | Mounting Type | Part Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Semtech Corporation | DIODE GEN PURP 400V 2.1A AXIAL | Axial | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Standard | 400V | 1.25V @ 1A | 50ns | 10µA @ 400V | -55°C ~ 150°C | 2.1A | 25pF @ 5V, 1MHz | ||||
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Semtech Corporation | DIODE GEN PURP 300V 2.1A AXIAL | Axial | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Standard | 300V | 1.25V @ 1A | 50ns | 10µA @ 300V | -55°C ~ 150°C | 2.1A | 25pF @ 5V, 1MHz | ||||
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Semtech Corporation | DIODE GEN PURP 200V 2.1A AXIAL | Axial | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Standard | 200V | 1.25V @ 1A | 50ns | 10µA @ 200V | -55°C ~ 150°C | 2.1A | 25pF @ 5V, 1MHz | ||||
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ON Semiconductor | 650V 16A SIC SBD | TO-247-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 150°C | 23A (DC) | 887pF @ 1V, 100kHz |