- Manufacture :
- Mounting Type :
- Supplier Device Package :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Semtech Corporation | DIODE GEN PURP 3K0V 5.5A | Module | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | - | Active | - | Standard | 30000V | 30V @ 3A | 2µs | 1µA @ 3000V | -55°C ~ 150°C | 5.5A | - | |||||
|
Semtech Corporation | DIODE GEN PURP 3KV 600MA AXIAL | Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 3000V | 5V @ 250mA | 2.5µs | 1µA @ 3000V | -65°C ~ 175°C | 600mA | 8pF @ 5V, 1MHz | |||||
|
Semtech Corporation | DIODE GEN PURP 3KV 360MA AXIAL | Axial | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 3000V | 7V @ 175mA | 50ns | 1µA @ 3000V | -65°C ~ 175°C | 360mA | 6.5pF @ 5V, 1MHz | |||||
|
Semtech Corporation | DIODE GEN PURP 3KV 600MA AXIAL | Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 3000V | 5V @ 250mA | 2.5µs | 1µA @ 3000V | -65°C ~ 175°C | 600mA | 8pF @ 5V, 1MHz | |||||
|
ON Semiconductor | DIODE GEN PURP 600V 8A TO220F | TO-220-2 Full Pack | STEALTH™ II | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220F-2L | Standard | 600V | 2.6V @ 8A | 30ns | 100µA @ 600V | -65°C ~ 175°C | 8A | - | |||||
|
ON Semiconductor | DIODE GEN PURP 600V 8A TO220 | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220F-2L | Standard | 600V | 2.6V @ 8A | 30ns | 100µA @ 600V | -65°C ~ 150°C | 8A | - | |||||
|
ON Semiconductor | DIODE GEN PURP 600V 8A TO220-2L | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Standard | 600V | 2.6V @ 8A | 30ns | 100µA @ 600V | -65°C ~ 150°C | 8A | - | |||||
|
ON Semiconductor | DIODE GEN PURP 600V 8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, STEALTH™ II | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-252 | Standard | 600V | 2.6V @ 8A | 30ns | 100µA @ 600V | -65°C ~ 150°C | 8A | - | ||||||
|
ON Semiconductor | DIODE GEN PURP 600V 8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, STEALTH™ II | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-252 | Standard | 600V | 2.6V @ 8A | 30ns | 100µA @ 600V | -65°C ~ 150°C | 8A | - |