- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
20 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | ||||||
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 60A TO247AC | TO-247-2 | - | Tube | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 1200V | 1.1V @ 60A | - | 100µA @ 1200V | -40°C ~ 150°C | 60A | - |