- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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SMC Diode Solutions | DIODE SCHOTTKY 45V TO220AC | TO-220-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Schottky | 45V | 570mV @ 20A | - | 2.7mA @ 45V | -55°C ~ 150°C | - | 1400pF @ 5V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 45V TO220AC | TO-220-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Schottky | 45V | 570mV @ 20A | - | 2.7mA @ 45V | -55°C ~ 150°C | - | 1400pF @ 5V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 250V 40A TO220AB | TO-220-3 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AB | Schottky | 250V | 970mV @ 40A | 35ns | 30µA @ 250V | -65°C ~ 150°C | 40A | 500pF @ 5V, 1MHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 100V 30A TO220AB | TO-220-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AB | Schottky | 100V | 950mV @ 30A | - | 1mA @ 100V | -40°C ~ 150°C | 30A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 250V 40A TO220AB | TO-220-3 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AB | Schottky | 250V | 970mV @ 40A | 35ns | 30µA @ 250V | -65°C ~ 150°C | 40A | 500pF @ 5V, 1MHz | ||||
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STMicroelectronics | DIODE GEN PURP 40V 16A TO220 | TO-220-3 | - | Tube | - | Through Hole | Obsolete | TO-220 | Standard | 40V | 180mV @ 16A | - | 1µA @ 40V | -45°C ~ 175°C | 16A (DC) | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 250V 40A TO220AB | TO-220-3 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AB | Schottky | 250V | 970mV @ 40A | 35ns | 30µA @ 250V | -65°C ~ 150°C | 40A | 500pF @ 5V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220AB | TO-220-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | P-TO220AB | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 6A (DC) | 300pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 45V TO220AC | TO-220-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Schottky | 45V | 570mV @ 20A | - | 2.7mA @ 45V | -55°C ~ 150°C | - | 1400pF @ 5V, 1MHz |