- Manufacture :
- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.65V @ 5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 4.3A (DC) | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.65V @ 5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 4.3A (DC) | 274pF @ 1V, 1MHz | ||||
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6,287
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | |||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.65V @ 5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 4.3A (DC) | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.65V @ 5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 4.3A (DC) | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.65V @ 5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 4.3A (DC) | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.65V @ 5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 4.3A (DC) | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.65V @ 5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 4.3A (DC) | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 250V 40A TO220AB | TO-220-3 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AB | Schottky | 250V | 970mV @ 40A | 35ns | 30µA @ 250V | -65°C ~ 150°C | 40A | 500pF @ 5V, 1MHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 250V 40A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2 | Schottky | 250V | 970mV @ 40A | 35ns | 30µA @ 250V | -65°C ~ 150°C | 40A | 500pF @ 5V, 1MHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 250V 40A TO220FP | TO-220-3 Full Pack | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220FP | Schottky | 250V | 970mV @ 40A | 35ns | 30µA @ 250V | -65°C ~ 150°C | 40A | 500pF @ 5V, 1MHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 250V 40A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | D2PAK | Schottky | 250V | 970mV @ 40A | 35ns | 250µA @ 250V | -65°C ~ 150°C | 40A | 500pF @ 5V, 1MHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 250V 40A TO220AB | TO-220-3 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AB | Schottky | 250V | 970mV @ 40A | 35ns | 30µA @ 250V | -65°C ~ 150°C | 40A | 500pF @ 5V, 1MHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 250V 40A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2 | Schottky | 250V | 970mV @ 40A | 35ns | 30µA @ 250V | -65°C ~ 150°C | 40A | 500pF @ 5V, 1MHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 250V 40A TO220AB | TO-220-3 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AB | Schottky | 250V | 970mV @ 40A | 35ns | 30µA @ 250V | -65°C ~ 150°C | 40A | 500pF @ 5V, 1MHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 250V 40A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2 | Schottky | 250V | 970mV @ 40A | 35ns | 30µA @ 250V | -65°C ~ 150°C | 40A | 500pF @ 5V, 1MHz |