- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Sanken | DIODE GEN PURP 600V 10A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 600V | 1.75V @ 10A | 27ns | 100µA @ 600V | -40°C ~ 150°C | 10A | - | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 1200V | 1.75V @ 10A | 0ns | 200µA @ 1200V | 175°C (Max) | 10A (DC) | 650pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 10A | - | 200µA @ 1200V | -55°C ~ 175°C | 10A (DC) | 612pF @ 1V, 100kHz | ||||
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IXYS | DIODE GEN PURP 300V 10A TO220AC | TO-220-2 | HiPerFRED™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 300V | 1.75V @ 10A | 30ns | 60µA @ 300V | -55°C ~ 175°C | 10A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 16A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D2PAK | Standard | 1200V | 3V @ 16A | 135ns | 20µA @ 1200V | -55°C ~ 150°C | 16A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 30A TO247AC | TO-247-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 1200V | 4.1V @ 30A | 170ns | 40µA @ 1200V | -55°C ~ 150°C | 30A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 8A TO247AC | TO-247-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 1200V | 3.3V @ 8A | 95ns | 10µA @ 1200V | -55°C ~ 150°C | 8A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 4A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D2PAK | Standard | 600V | 1.8V @ 4A | 42ns | 3µA @ 600V | -55°C ~ 150°C | 4A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 6A TO220AC | TO-220-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 1200V | 3V @ 6A | 80ns | 5µA @ 1200V | -55°C ~ 150°C | 6A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 8A TO220AC | TO-220-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 1200V | 3.3V @ 8A | 95ns | 10µA @ 1200V | -55°C ~ 150°C | 8A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D2PAK | Standard | 600V | 1.7V @ 8A | 55ns | 5µA @ 600V | -55°C ~ 150°C | 8A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A TO220AC | TO-220-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 600V | 1.7V @ 15A | 60ns | 10µA @ 600V | -55°C ~ 150°C | 15A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A TO247AC | TO-247-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 600V | 1.7V @ 15A | 60ns | 10µA @ 600V | -55°C ~ 150°C | 15A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 25A TO247AC | TO-247-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 600V | 1.7V @ 25A | 75ns | 20µA @ 600V | -55°C ~ 150°C | 25A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 16A TO247AC | TO-247-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 1200V | 3V @ 16A | 135ns | 20µA @ 1200V | -55°C ~ 150°C | 16A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 600V | 1.7V @ 8A | 55ns | 5µA @ 600V | -55°C ~ 150°C | 8A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 25A TO220AC | TO-220-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 600V | 1.7V @ 25A | 75ns | 20µA @ 600V | -55°C ~ 150°C | 25A | - | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 1.7KV 10A TO247-2 | TO-247-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1700V | 1.75V @ 10A | 0ns | 20µA @ 1700V | -55°C ~ 175°C | 10A | 812pF @ 1V, 1MHz |