- Package / Case :
- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 15A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 14.6A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 15A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 14.6A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 15A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 14.6A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 15A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 14.6A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 15A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 14.6A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 15A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 14.6A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 15A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 14.6A (DC) | 1107pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 600V | 2.4V @ 8A | 30ns | 100µA @ 600V | -55°C ~ 175°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 8A TO220F | TO-220-2 Full Pack | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220F-2L | Standard | 600V | 2.4V @ 8A | 30ns | 100µA @ 600V | -55°C ~ 150°C | 8A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 | FRED Pt® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 600V | 2.4V @ 8A | 25ns | 50µA @ 600V | -65°C ~ 175°C | 8A | - |