- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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SMC Diode Solutions | DIODE GEN PURP 300V 60A TO247AC | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247AC | Standard | 300V | 1.4V @ 60A | 45ns | 10µA @ 300V | -55°C ~ 150°C | 60A | - | ||||
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SMC Diode Solutions | DIODE GEN PURP 300V 60A TO247AC | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247AC | Standard | 300V | 1.4V @ 60A | 45ns | 10µA @ 300V | -55°C ~ 150°C | 60A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 60A TO247AC | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC | Standard | 1200V | 1.4V @ 60A | 480ns | 100µA @ 1200V | -40°C ~ 150°C | 60A | - | ||||
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Microsemi Corporation | DIODE GEN PURP 300V 60A TO247 | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247 | Standard | 300V | 1.4V @ 60A | 38ns | 250µA @ 300V | -55°C ~ 175°C | 60A | - | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.7V @ 8A | 0ns | 300µA @ 600V | -55°C ~ 175°C | 8A (DC) | 280pF @ 0V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 12A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.7V @ 12A | 0ns | 400µA @ 600V | -55°C ~ 175°C | 12A (DC) | 450pF @ 1V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 300V 10A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 300V | 1.7V @ 10A | 0ns | 200µA @ 300V | -55°C ~ 175°C | 10A (DC) | 600pF @ 0V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 6A (DC) | 300pF @ 0V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 4A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.9V @ 4A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 4A (DC) | 150pF @ 0V, 1MHz | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 60A TO247AC | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC | Standard | 1200V | 1.4V @ 60A | 480ns | 100µA @ 1200V | -40°C ~ 150°C | 60A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 60A TO247AC | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC | Standard | 1000V | 1.4V @ 60A | 480ns | 100µA @ 1000V | -40°C ~ 150°C | 60A | - |