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Package / Case :
Supplier Device Package :
Voltage - DC Reverse (Vr) (Max) :
Voltage - Forward (Vf) (Max) @ If :
Reverse Recovery Time (trr) :
Current - Average Rectified (Io) :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Speed Mounting Type Part Status Supplier Device Package Diode Type Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io)
BYT12P-1000
RFQ
STMicroelectronics DIODE GEN PURP 1KV 12A TO220AC TO-220-2 - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-220AC Standard 1000V 1.9V @ 12A 155ns 50µA @ 1000V -40°C ~ 150°C 12A
BYT08P-1000
RFQ
STMicroelectronics DIODE GEN PURP 1KV 8A TO220AC TO-220-2 - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-220AC Standard 1000V 1.9V @ 8A 155ns 35µA @ 1000V -40°C ~ 150°C 8A
40EPF06
RFQ
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 40A TO247AC TO-247-2 - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-247AC Modified Standard 600V 1.25V @ 40A 180ns 100µA @ 600V -40°C ~ 150°C 40A
40EPF04
RFQ
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 40A TO247AC TO-247-2 - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-247AC Modified Standard 400V 1.25V @ 40A 180ns 100µA @ 400V -40°C ~ 150°C 40A
40EPF02
RFQ
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 40A TO247AC TO-247-2 - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-247AC Modified Standard 200V 1.25V @ 40A 180ns 100µA @ 200V -40°C ~ 150°C 40A
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