- Package / Case :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 40A TO247AC | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 600V | 1.25V @ 40A | 180ns | 100µA @ 600V | -40°C ~ 150°C | 40A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 40A TO247AC | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 400V | 1.25V @ 40A | 180ns | 100µA @ 400V | -40°C ~ 150°C | 40A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 40A TO247AC | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 200V | 1.25V @ 40A | 180ns | 100µA @ 200V | -40°C ~ 150°C | 40A | - |