- Package / Case :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 30V 5.5A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D-Pak | Schottky | 30V | 460mV @ 5A | - | 3mA @ 30V | -40°C ~ 150°C | 5.5A | - |