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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Speed Mounting Type Part Status Supplier Device Package Diode Type Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io)
IDP06E60
RFQ
Infineon Technologies DIODE GEN PURP 600V 14.7A TO220 TO-220-2 - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete PG-TO220-2-2 Standard 600V 2V @ 6A 70ns 50µA @ 600V -55°C ~ 175°C 14.7A (DC)
60EPS12
RFQ
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 60A TO247AC TO-247-2 - Tube Standard Recovery >500ns, > 200mA (Io) Through Hole Obsolete TO-247AC Modified Standard 1200V 1.1V @ 60A - 100µA @ 1200V -40°C ~ 150°C 60A
60EPS08
RFQ
Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 60A TO247AC TO-247-2 - Tube Standard Recovery >500ns, > 200mA (Io) Through Hole Obsolete TO-247AC Modified Standard 800V 1.1V @ 60A - 100µA @ 800V -40°C ~ 150°C 60A
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