- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Sanken | DIODE GEN PURP 600V 20A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 600V | 1.3V @ 20A | 150ns | 200µA @ 600V | -40°C ~ 150°C | 20A | - | ||||
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ROHM Semiconductor | DIODE GP 600V 20A TO220ACFP | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220ACFP | Standard | 600V | 1.3V @ 20A | 180ns | 10µA @ 600V | 150°C (Max) | 20A | - | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
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2,737
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | |||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 200V 8A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2 | Standard | 200V | 1.3V @ 20A | 35ns | 5µA @ 200V | -65°C ~ 175°C | 8A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 20A TO220FP | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC Full Pack | Standard | 600V | 1.3V @ 20A | 160ns | 100µA @ 600V | -40°C ~ 150°C | 20A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 20A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 400V | 1.3V @ 20A | 160ns | 100µA @ 400V | -40°C ~ 150°C | 20A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 20A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 200V | 1.3V @ 20A | 160ns | 100µA @ 200V | -40°C ~ 150°C | 20A | - |