- Manufacture :
- Package / Case :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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IXYS | DIODE GEN PURP 400V 30A TO247AD | TO-247-2 | HiPerFRED™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AD | Standard | 400V | 1.46V @ 30A | 30ns | 250µA @ 400V | -55°C ~ 175°C | 30A | - |