- Mounting Type :
- Part Status :
- Supplier Device Package :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
19 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | |||||
|
Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 8A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.7V @ 8A | 0ns | 100µA @ 1200V | -55°C ~ 135°C | 8A | 477pF @ 1V, 1MHz | |||||
|
Global Power Technologies Group | DIODE SCHOTTKY 600V 6A TO263-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Obsolete | TO-263-2 | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 100µA @ 600V | -55°C ~ 135°C | 6A | 243pF @ 1V, 1MHz | |||||
|
Global Power Technologies Group | DIODE SCHOTTKY 600V 6A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | TO-220-2 | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 100µA @ 600V | -55°C ~ 135°C | 6A (DC) | 243pF @ 1V, 1MHz | |||||
|
Global Power Technologies Group | DIODE SCHOTTKY 600V 3A TO252-2 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Obsolete | TO-252-2 | Silicon Carbide Schottky | 600V | 1.7V @ 3A | 0ns | 100µA @ 600V | -55°C ~ 135°C | 3A (DC) | 122pF @ 1V, 1MHz | |||||
|
Global Power Technologies Group | DIODE SCHOTTKY 1.7KV 10A TO247-2 | TO-247-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1700V | 1.75V @ 10A | 0ns | 20µA @ 1700V | -55°C ~ 175°C | 10A | 812pF @ 1V, 1MHz | |||||
|
Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 24A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 8A | 0ns | 20µA @ 1200V | -50°C ~ 175°C | 24A (DC) | 508pF @ 1V, 1MHz | |||||
|
Global Power Technologies Group | DIODE SCHOTTKY 650V 30A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.65V @ 10A | - | 100µA @ 650V | -55°C ~ 175°C | 30A (DC) | 527pF @ 1V, 1MHz | |||||
|
Global Power Technologies Group | DIODE SCHOTTKY 650V 6A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.65V @ 6A | 0ns | 60µA @ 650V | -55°C ~ 175°C | 6A | 316pF @ 1V, 1MHz | |||||
|
Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 10A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 175°C | 10A | 635pF @ 1V, 1MHz | |||||
|
Global Power Technologies Group | DIODE SCHOTTKY 600V 6A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 600V | 1.65V @ 6A | 0ns | 20µA @ 600V | -55°C ~ 175°C | 6A (DC) | 316pF @ 1V, 1MHz | |||||
|
Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 10A TO247-2 | TO-247-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 175°C | 10A | 635pF @ 1V, 1MHz | |||||
|
Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 5A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Discontinued at Digi-Key | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 5A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 317pF @ 1V, 1MHz |