- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Sanken | DIODE GEN PURP 600V 20A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 600V | 1.3V @ 20A | 150ns | 200µA @ 600V | -40°C ~ 150°C | 20A | - | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 600V 10A TO220FM | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220FM | Silicon Carbide Schottky | 600V | 1.7V @ 10A | 0ns | 200µA @ 600V | 150°C (Max) | 10A (DC) | 430pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 10A TO220FM | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FM | Silicon Carbide Schottky | 650V | 1.55V @ 10A | 0ns | 200µA @ 600V | 175°C (Max) | 10A (DC) | 365pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 10A | 0ns | 200µA @ 600V | 175°C (Max) | 10A (DC) | 365pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 600V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 600V | 1.7V @ 10A | 0ns | 200µA @ 600V | 175°C (Max) | 10A | 430pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 10A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 10A | 0ns | 200µA @ 600V | 175°C (Max) | 10A (DC) | 365pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 600V 5A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 600V | 2.3V @ 5A | 80ns | 2.5µA @ 600V | -65°C ~ 150°C | 5A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 5A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 600V | 2.3V @ 5A | 80ns | 2.5µA @ 600V | -65°C ~ 150°C | 5A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 30A TO247-2 | TO-247-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 600V | 1.5V @ 30A | 80ns | 250µA @ 600V | -55°C ~ 175°C | 30A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 60A TO247 | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 600V | 1.7V @ 60A | 80ns | 100µA @ 600V | -65°C ~ 150°C | 60A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 60A TO247 | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247 | Standard | 600V | 1.7V @ 60A | 80ns | 100µA @ 600V | -65°C ~ 150°C | 60A | - | ||||
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Wolfspeed / Cree | DIODE SCHOTTKY 600V 16.5A TO263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Obsolete | TO-263-2 | Silicon Carbide Schottky | 600V | 1.8V @ 10A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 16.5A | 550pF @ 0V, 1MHz | ||||
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Wolfspeed / Cree | DIODE SCHOTTKY 600V 16.5A TO220 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | TO-220-2 | Silicon Carbide Schottky | 600V | 1.8V @ 10A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 16.5A | 550pF @ 0V, 1MHz | ||||
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Wolfspeed / Cree | DIODE SCHOTTKY 600V 10A TO263-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Obsolete | TO-263-2 | Silicon Carbide Schottky | 600V | 1.8V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 10A | 340pF @ 0V, 1MHz | ||||
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Wolfspeed / Cree | DIODE SCHOTTKY 600V 10A TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | TO-220-2 | Silicon Carbide Schottky | 600V | 1.8V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 10A | 340pF @ 0V, 1MHz | ||||
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Wolfspeed / Cree | DIODE SCHOTTKY 600V 4A TO252-2 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Obsolete | TO-252-2 | Silicon Carbide Schottky | 600V | 1.8V @ 4A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 7A | 220pF @ 0V, 1MHz | ||||
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Wolfspeed / Cree | DIODE SCHOTTKY 600V 7A TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | TO-220-2 | Silicon Carbide Schottky | 600V | 1.8V @ 4A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 7A | 220pF @ 0V, 1MHz | ||||
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Wolfspeed / Cree | DIODE SCHOTTKY 600V 3.5A TO263-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Obsolete | TO-263-2 | Silicon Carbide Schottky | 600V | 1.8V @ 2A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 3.5A | 120pF @ 0V, 1MHz | ||||
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Wolfspeed / Cree | DIODE SCHOTTKY 600V 3.5A TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | TO-220-2 | Silicon Carbide Schottky | 600V | 1.8V @ 2A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 3.5A | 120pF @ 0V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 600V 5A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 600V | 2.3V @ 5A | 80ns | 2.5µA @ 600V | -65°C ~ 150°C | 5A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 5A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 600V | 2.3V @ 5A | 80ns | 2.5µA @ 600V | -65°C ~ 150°C | 5A | - | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 6A (DC) | 300pF @ 0V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 4A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.9V @ 4A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 4A (DC) | 150pF @ 0V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220AB | TO-220-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | P-TO220AB | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 6A (DC) | 300pF @ 0V, 1MHz | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 6A TO220AC | TO-220-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 1200V | 3V @ 6A | 80ns | 5µA @ 1200V | -55°C ~ 150°C | 6A | - |