- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Reverse Recovery Time (trr) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
|
|
|
ON Semiconductor | DIODE GEN PURP 1.7KV 10A TO3PF | TO-3PF Variant, 2 Leads | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-3PF-2L | Standard | 1700V | 2.2V @ 10A | 140ns | 100µA @ 1700V | -65°C ~ 150°C | 10A | - | ||||
|
|
|
ON Semiconductor | DIODE GEN PURP 1.7KV 10A TO3PF | TO-3PF Variant, 2 Leads | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-3PF-2L | Standard | 1700V | 2.2V @ 10A | 140ns | 100µA @ 1700V | -65°C ~ 150°C | 10A | - | ||||
,%20SC-63.jpg)
|
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D-Pak | Standard | 600V | 1.2V @ 8A | 140ns | 100µA @ 600V | -40°C ~ 150°C | 8A | - | ||||
|
|
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D-Pak | Standard | 400V | 1.2V @ 8A | 140ns | 100µA @ 200V | -40°C ~ 150°C | 8A | - | ||||
|
|
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D-Pak | Standard | 200V | 1.2V @ 8A | 140ns | 100µA @ 200V | -40°C ~ 150°C | 8A | - |