- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Reverse Recovery Time (trr) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE SCHOTTKY 650V 8A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 8A | 0ns | 160µA @ 600V | 175°C (Max) | 8A (DC) | 291pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SC SCHKY 650V 8A TO220ACP | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 8A | 0ns | 40µA @ 650V | 175°C (Max) | 8A (DC) | 400pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 8A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 8A | 0ns | 160µA @ 600V | 175°C (Max) | 8A (DC) | 291pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 1.7KV 10A TO3PF | TO-3PF Variant, 2 Leads | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-3PF-2L | Standard | 1700V | 2.2V @ 10A | 140ns | 100µA @ 1700V | -65°C ~ 150°C | 10A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 8A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 8A | - | 200µA @ 1200V | -55°C ~ 175°C | 8A (DC) | 538pF @ 1V, 100kHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.7V @ 8A | 0ns | 300µA @ 600V | -55°C ~ 175°C | 8A (DC) | 280pF @ 0V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 1.7KV 10A TO3PF | TO-3PF Variant, 2 Leads | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-3PF-2L | Standard | 1700V | 2.2V @ 10A | 140ns | 100µA @ 1700V | -65°C ~ 150°C | 10A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D-Pak | Standard | 600V | 1.2V @ 8A | 140ns | 100µA @ 600V | -40°C ~ 150°C | 8A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D-Pak | Standard | 400V | 1.2V @ 8A | 140ns | 100µA @ 200V | -40°C ~ 150°C | 8A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D-Pak | Standard | 200V | 1.2V @ 8A | 140ns | 100µA @ 200V | -40°C ~ 150°C | 8A | - |