- Package / Case :
- Part Status :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 80A TO247AC | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC | Standard | 600V | 1.25V @ 80A | 190ns | 100µA @ 600V | -65°C ~ 175°C | 80A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 80A TO247AC | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC | Standard | 400V | 1.25V @ 80A | 190ns | 100µA @ 400V | -65°C ~ 175°C | 80A | - | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 24A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 8A | 0ns | 20µA @ 1200V | -50°C ~ 175°C | 24A (DC) | 508pF @ 1V, 1MHz |