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Supplier Device Package :
Voltage - DC Reverse (Vr) (Max) :
Voltage - Forward (Vf) (Max) @ If :
Reverse Recovery Time (trr) :
Current - Reverse Leakage @ Vr :
Operating Temperature - Junction :
Current - Average Rectified (Io) :
Capacitance @ Vr, F :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Speed Mounting Type Part Status Supplier Device Package Diode Type Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F
FAN8025G3X
RFQ
ON Semiconductor DIODE GEN PURP 150V 8A TO220AC TO-220-2 SWITCHMODE™ Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-220AC Standard 150V 975mV @ 8A 35ns 5µA @ 150V -65°C ~ 175°C 8A -
DS90CR581MTDX
Per Unit
$0.9100
RFQ
ON Semiconductor DIODE GEN PURP 150V 8A TO220AC TO-220-2 SWITCHMODE™ Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Active TO-220AC Standard 150V 975mV @ 8A 35ns 5µA @ 150V -65°C ~ 175°C 8A -
MUR815
RFQ
ON Semiconductor DIODE GEN PURP 150V 8A TO220AC TO-220-2 SWITCHMODE™ Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-220AC Standard 150V 975mV @ 8A 35ns 5µA @ 150V -65°C ~ 175°C 8A -
SDT04S60
RFQ
Infineon Technologies DIODE SCHOTTKY 600V 4A TO220-2 TO-220-2 CoolSiC™ Tube No Recovery Time > 500mA (Io) Through Hole Obsolete PG-TO220-2-2 Silicon Carbide Schottky 600V 1.9V @ 4A 0ns 200µA @ 600V -55°C ~ 175°C 4A (DC) 150pF @ 0V, 1MHz
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