- Manufacture :
- Part Status :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ROHM Semiconductor | DIODE SCHOTTKY 650V 2A TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | Silicon Carbide Schottky | 650V | 1.5V @ 2A | 0ns | 10.8µA @ 650V | 175°C (Max) | 2A (DC) | 110pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 100V 8A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | Standard | 100V | 975mV @ 8A | 35ns | 5µA @ 100V | -65°C ~ 175°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 100V 8A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Standard | 100V | 975mV @ 8A | 35ns | 5µA @ 100V | -65°C ~ 175°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 100V 8A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | Standard | 100V | 975mV @ 8A | 35ns | 5µA @ 100V | -65°C ~ 175°C | 8A | - |