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Supplier Device Package :
Voltage - DC Reverse (Vr) (Max) :
Voltage - Forward (Vf) (Max) @ If :
Reverse Recovery Time (trr) :
Current - Reverse Leakage @ Vr :
Operating Temperature - Junction :
Current - Average Rectified (Io) :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Speed Mounting Type Part Status Supplier Device Package Diode Type Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F
FDC6304P-NL
RFQ
ON Semiconductor DIODE GEN PURP 600V 5A TO220F TO-220-2 Full Pack - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-220F-2L Standard 600V 2.3V @ 5A 80ns 2.5µA @ 600V -65°C ~ 150°C 5A -
FDC6303N-NL
RFQ
ON Semiconductor DIODE GEN PURP 600V 5A TO220F TO-220-2 Full Pack - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-220F-2L Standard 600V 2.3V @ 5A 80ns 2.5µA @ 600V -65°C ~ 150°C 5A -
ESD9D3.3CT5G
Per Unit
$11.4800
RFQ
ON Semiconductor DIODE SCHOTTKY 1.2KV 20A TO220-2 TO-220-2 - Tube No Recovery Time > 500mA (Io) Through Hole Active TO-220-2L Silicon Carbide Schottky 1200V 1.75V @ 20A 0ns 200µA @ 1200V -55°C ~ 175°C 20A 1220pF @ 1V, 100KHz
EFC6618R-A
Per Unit
$13.4400
RFQ
ON Semiconductor DIODE SCHOTTKY 1.2KV 30A TO247-2 TO-247-2 - Tube No Recovery Time > 500mA (Io) Through Hole Active TO-247-2 Silicon Carbide Schottky 1200V 1.75V @ 20A 0ns 200µA @ 1200V - 30A (DC) 1220pF @ 1V, 100KHz
FFPF05U60STTU
RFQ
ON Semiconductor DIODE GEN PURP 600V 5A TO220F TO-220-2 Full Pack - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-220F-2L Standard 600V 2.3V @ 5A 80ns 2.5µA @ 600V -65°C ~ 150°C 5A -
FFPF05U60STU
RFQ
ON Semiconductor DIODE GEN PURP 600V 5A TO220F TO-220-2 Full Pack - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-220F-2L Standard 600V 2.3V @ 5A 80ns 2.5µA @ 600V -65°C ~ 150°C 5A -
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