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Package / Case :
Supplier Device Package :
Voltage - DC Reverse (Vr) (Max) :
Voltage - Forward (Vf) (Max) @ If :
Reverse Recovery Time (trr) :
Current - Reverse Leakage @ Vr :
Operating Temperature - Junction :
Current - Average Rectified (Io) :
Capacitance @ Vr, F :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Speed Mounting Type Part Status Supplier Device Package Diode Type Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F
BA18BCOW
Per Unit
$2.4900
RFQ
ROHM Semiconductor DIODE SCHOTTKY 650V 4A TO220-2 TO-220-2 - Tube No Recovery Time > 500mA (Io) Through Hole Active - Silicon Carbide Schottky 650V 1.5V @ 4A 0ns 20µA @ 650V 175°C (Max) 4A (DC) 200pF @ 1V, 1MHz
HFA25PB60
RFQ
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 25A TO247AC TO-247-2 HEXFRED® Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-247AC Modified Standard 600V 1.7V @ 25A 75ns 20µA @ 600V -55°C ~ 150°C 25A -
HFA25TB60
RFQ
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 25A TO220AC TO-220-2 HEXFRED® Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-220AC Standard 600V 1.7V @ 25A 75ns 20µA @ 600V -55°C ~ 150°C 25A -
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