- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE SCHOTTKY 650V 4A TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 4A | 0ns | 20µA @ 650V | 175°C (Max) | 4A (DC) | 200pF @ 1V, 1MHz | ||||
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2,445
In-stock
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ON Semiconductor | DIODE GEN PURP 1.2KV 8A TO220-2L | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 1200V | 3.3V @ 8A | 300ns | 100µA @ 1200V | -55°C ~ 150°C | 8A | 30pF @ 10V, 1MHz | |||
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ON Semiconductor | DIODE GEN PURP 1.2KV 8A TO220-2L | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 1200V | 3.3V @ 8A | 300ns | 100µA @ 1200V | -55°C ~ 150°C | 8A | 30pF @ 10V, 1MHz | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 8A TO247AC | TO-247-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 1200V | 3.3V @ 8A | 95ns | 10µA @ 1200V | -55°C ~ 150°C | 8A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 8A TO220AC | TO-220-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 1200V | 3.3V @ 8A | 95ns | 10µA @ 1200V | -55°C ~ 150°C | 8A | - |