- Manufacture :
- Package / Case :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 4A TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 4A | 0ns | 20µA @ 650V | 175°C (Max) | 4A (DC) | 200pF @ 1V, 1MHz | ||||
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
|
|
|
2,737
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | |||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz |