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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Speed Mounting Type Part Status Supplier Device Package Diode Type Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F
BA18BCOW
Per Unit
$2.4900
RFQ
ROHM Semiconductor DIODE SCHOTTKY 650V 4A TO220-2 TO-220-2 - Tube No Recovery Time > 500mA (Io) Through Hole Active - Silicon Carbide Schottky 650V 1.5V @ 4A 0ns 20µA @ 650V 175°C (Max) 4A (DC) 200pF @ 1V, 1MHz
10ETS12S
RFQ
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 10A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - Tube Standard Recovery >500ns, > 200mA (Io) Surface Mount Obsolete TO-263AB (D²PAK) Standard 1200V 1.1V @ 10A - 50µA @ 1200V -40°C ~ 150°C 10A -
10ETF06S
RFQ
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 10A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - Tube Fast Recovery =< 500ns, > 200mA (Io) Surface Mount Obsolete TO-263AB (D²PAK) Standard 600V 1.2V @ 10A 145ns 100µA @ 600V -40°C ~ 150°C 10A -
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