- Manufacture :
- Package / Case :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
|
|
ON Semiconductor | DIODE SCHOTTKY 35V 8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DPAK | Schottky | 35V | 510mV @ 8A | - | 1.4mA @ 35V | -65°C ~ 150°C | 8A | - | ||||
|
|
|
ON Semiconductor | DIODE SCHOTTKY 35V 8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DPAK | Schottky | 35V | 510mV @ 8A | - | 1.4mA @ 35V | -65°C ~ 150°C | 8A | - | ||||
|
|
|
ON Semiconductor | DIODE SCHOTTKY 35V 8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DPAK | Schottky | 35V | 510mV @ 8A | - | 1.4mA @ 35V | -65°C ~ 150°C | 8A | - | ||||
|
|
|
ON Semiconductor | DIODE SCHOTTKY 35V 8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DPAK | Schottky | 35V | 510mV @ 8A | - | 1.4mA @ 35V | -65°C ~ 150°C | 8A | - |