- Package / Case :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
33 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE GEN PURP 600V 20A TO220NFM | TO-220-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 1.55V @ 20A | 60ns | 10µA @ 600V | 150°C (Max) | 20A | - | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 600V 20A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2FS | Standard | 600V | 1.4V @ 20A | 60ns | 20µA @ 600V | 150°C (Max) | 20A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 6A TO251 | TO-251-2, IPak | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-251-2 | Standard | 600V | 1.5V @ 6A | 60ns | 100µA @ 600V | -65°C ~ 175°C | 6A | - | ||||
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ON Semiconductor | DIODE GEN PURP 400V 8A TO220AC | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 400V | 1.3V @ 8A | 60ns | 10µA @ 400V | -65°C ~ 175°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 600V | 1.5V @ 8A | 60ns | 10µA @ 600V | -65°C ~ 175°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 15A TO220AC | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 600V | 1.5V @ 15A | 60ns | 10µA @ 600V | -65°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE GEN PURP 400V 15A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2 | Standard | 400V | 1.25V @ 15A | 60ns | 10µA @ 400V | -65°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE GEN PURP 400V 8A TO220AC | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 400V | 1.3V @ 8A | 60ns | 10µA @ 400V | -65°C ~ 175°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 50A TO247 | TO-247-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 600V | 2.1V @ 50A | 60ns | 250µA @ 600V | -55°C ~ 175°C | 50A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 15A TO220FP | TO-220-2 Full Pack | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220FP | Standard | 600V | 1.5V @ 15A | 60ns | 10µA @ 600V | -65°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 8A TO220FP | TO-220-2 Full Pack | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220FP | Standard | 600V | 1.5V @ 8A | 60ns | 10µA @ 600V | -65°C ~ 175°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 30A TO247 | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 600V | 1.5V @ 30A | 60ns | 250µA @ 600V | -65°C ~ 175°C | 30A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 30A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 600V | 1.5V @ 30A | 60ns | 250µA @ 600V | -55°C ~ 175°C | 30A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 15A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 600V | 1.5V @ 15A | 60ns | 100µA @ 600V | -55°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 15A TO220AC | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 600V | 1.5V @ 15A | 60ns | 10µA @ 600V | -65°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE GEN PURP 400V 15A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2 | Standard | 400V | 1.25V @ 15A | 60ns | 10µA @ 400V | -65°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 600V | 1.5V @ 8A | 60ns | 10µA @ 600V | -65°C ~ 175°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 6A TO251 | TO-251-2, IPak | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-251-2 | Standard | 600V | 1.5V @ 6A | 60ns | 100µA @ 600V | -65°C ~ 175°C | 6A | - | ||||
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ON Semiconductor | DIODE GEN PURP 400V 8A TO220AC | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 400V | 1.3V @ 8A | 60ns | 10µA @ 400V | -65°C ~ 175°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 600V | 1.5V @ 8A | 60ns | 10µA @ 600V | -65°C ~ 175°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 15A TO220AC | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 600V | 1.5V @ 15A | 60ns | 10µA @ 600V | -65°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE GEN PURP 400V 15A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2 | Standard | 400V | 1.25V @ 15A | 60ns | 10µA @ 400V | -65°C ~ 175°C | 15A | - | ||||
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STMicroelectronics | DIODE GEN PURP 600V 20A SOD93-2 | SOD-93-2 | TURBOSWITCH™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | SOD-93-2 | Standard | 600V | 1.75V @ 20A | 60ns | 100µA @ 600V | 150°C (Max) | 20A | - |