- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 1KV 15A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 1000V | 1.8V @ 15A | 125ns | 100µA @ 1000V | -65°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1KV 15A TO220AC | TO-220-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 1000V | 1.8V @ 15A | 260ns | 100µA @ 1000V | -55°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 15A TO247-2 | TO-247-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 600V | 2.3V @ 15A | 55ns | 100µA @ 1000V | -55°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1KV 8A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 1000V | 1.8V @ 8A | 100ns | 100µA @ 1000V | -55°C ~ 175°C | 8A | - | ||||
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STMicroelectronics | DIODE GEN PURP 1KV 30A SOD93-2 | SOD-93-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | SOD-93-2 | Standard | 1000V | 1.9V @ 30A | 165ns | 100µA @ 1000V | -40°C ~ 150°C | 30A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1KV 15A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 1000V | 1.8V @ 15A | 125ns | 100µA @ 1000V | -65°C ~ 175°C | 15A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 60A TO247AC | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC | Standard | 1000V | 1.4V @ 60A | 480ns | 100µA @ 1000V | -40°C ~ 150°C | 60A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 40A TO247AC | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 1200V | 1.4V @ 40A | 450ns | 100µA @ 1000V | -40°C ~ 150°C | 40A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 40A TO247AC | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 1000V | 1.4V @ 40A | 450ns | 100µA @ 1000V | -40°C ~ 150°C | 40A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 30A TO247AC | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC | Standard | 1000V | 1.41V @ 30A | 450ns | 100µA @ 1000V | -40°C ~ 150°C | 30A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 20A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 1000V | 1.31V @ 20A | 400ns | 100µA @ 1000V | -40°C ~ 150°C | 20A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D-Pak | Standard | 1000V | 1.3V @ 8A | 270ns | 100µA @ 1000V | -40°C ~ 150°C | 8A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 20A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D2PAK | Standard | 1000V | 1.31V @ 20A | 400ns | 100µA @ 1000V | -40°C ~ 150°C | 20A | - |