- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
|
|
|
6,287
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | |||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
|
|
ON Semiconductor | DIODE GEN PURP 600V 15A TO247-2 | TO-247-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 600V | 2.3V @ 15A | 55ns | 100µA @ 1000V | -55°C ~ 175°C | 15A | - | ||||
|
|
ON Semiconductor | DIODE GEN PURP 350V 40A TO3P | TO-3P-3, SC-65-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-3P | Standard | 350V | 1.6V @ 40A | 55ns | 100µA @ 350V | -65°C ~ 150°C | 40A | - | ||||
|
|
STMicroelectronics | DIODE GEN PURP 600V 12A TO220AC | TO-220-2 | TURBOSWITCH™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 600V | 1.75V @ 12A | 55ns | 100µA @ 600V | 150°C (Max) | 12A | - | ||||
|
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 300V 30A TO247AC | TO-247-2 | FRED Pt® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 300V | 1.25V @ 30A | 55ns | 60µA @ 300V | -65°C ~ 175°C | 30A | - | ||||
,%20SC-63.jpg)
|
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D-Pak | Standard | 600V | 1.7V @ 8A | 55ns | 5µA @ 600V | -55°C ~ 150°C | 8A | - | ||||
|
|
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO247AC | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 600V | 1.7V @ 8A | 55ns | 5µA @ 600V | -55°C ~ 150°C | 8A | - | ||||
|
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D2PAK | Standard | 600V | 1.7V @ 8A | 55ns | 5µA @ 600V | -55°C ~ 150°C | 8A | - | ||||
|
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 600V | 1.7V @ 8A | 55ns | 5µA @ 600V | -55°C ~ 150°C | 8A | - | ||||
|
|
STMicroelectronics | DIODE GEN PURP 600V 30A DO247 | DO-247-2 (Straight Leads) | ECOPACK® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-247 | Standard | 600V | 2.95V @ 30A | 55ns | 40µA @ 600V | 175°C (Max) | 30A | - |