- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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6,287
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | |||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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Micro Commercial Co | DIODE GEN PURP 2.5A 1000V R3 | R-3, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | R-3 | Standard | 1000V | 1V @ 2.5A | - | 5µA @ 1000V | -55°C ~ 150°C | 2.5A | 35pF @ 4V, 1MHz | |||||
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Micro Commercial Co | DIODE GEN PURP 1KV 8A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 1000V | 1.3V @ 8A | 500ns | 5µA @ 1000V | -55°C ~ 150°C | 8A | - | ||||
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Micro Commercial Co | DIODE GEN PURP 2.5A 1000V R3 | R-3, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | R-3 | Standard | 1000V | 1.1V @ 2.5A | - | 5µA @ 1000V | -55°C ~ 150°C | 2.5A | 40pF @ 4V, 1MHz | |||||
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Micro Commercial Co | DIODE GEN PURP 2.5A 1000V R3 | R-3, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | R-3 | Standard | 1000V | 1V @ 2.5A | - | 5µA @ 1000V | -55°C ~ 150°C | 2.5A | 35pF @ 4V, 1MHz | |||||
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Micro Commercial Co | DIODE GEN PURP 1KV 8A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 1000V | 1.3V @ 8A | 500ns | 5µA @ 1000V | -55°C ~ 150°C | 8A | - | ||||
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Micro Commercial Co | DIODE GEN PURP 2.5A 1000V R3 | R-3, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | R-3 | Standard | 1000V | 1.1V @ 2.5A | - | 5µA @ 1000V | -55°C ~ 150°C | 2.5A | 40pF @ 4V, 1MHz | |||||
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Micro Commercial Co | DIODE GEN PURP 2.5A 1000V R3 | R-3, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | R-3 | Standard | 1000V | 1V @ 2.5A | - | 5µA @ 1000V | -55°C ~ 150°C | 2.5A | 35pF @ 4V, 1MHz | |||||
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Micro Commercial Co | DIODE GEN PURP 1KV 8A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 1000V | 1.3V @ 8A | 500ns | 5µA @ 1000V | -55°C ~ 150°C | 8A | - | ||||
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Micro Commercial Co | DIODE GEN PURP 2.5A 1000V R3 | R-3, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | R-3 | Standard | 1000V | 1.1V @ 2.5A | - | 5µA @ 1000V | -55°C ~ 150°C | 2.5A | 40pF @ 4V, 1MHz | |||||
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Micro Commercial Co | DIODE GEN PURP 2.5A 1000V R3 | R-3, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | R-3 | Standard | 1000V | 1V @ 2.5A | - | 5µA @ 1000V | -55°C ~ 150°C | 2.5A | 35pF @ 4V, 1MHz | |||||
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Micro Commercial Co | DIODE GEN PURP 1KV 8A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 1000V | 1.3V @ 8A | 500ns | 5µA @ 1000V | -55°C ~ 150°C | 8A | - | ||||
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Micro Commercial Co | DIODE GEN PURP 2.5A 1000V R3 | R-3, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | R-3 | Standard | 1000V | 1.1V @ 2.5A | - | 5µA @ 1000V | -55°C ~ 150°C | 2.5A | 40pF @ 4V, 1MHz | |||||
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STMicroelectronics | DIODE GEN PURP 1KV 8A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D2PAK | Standard | 1000V | 2V @ 8A | 85ns | 5µA @ 1000V | 175°C (Max) | 8A | - |