- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
26 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | |||||
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2,737
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 520V 5A TO220FP | TO-220-2 Full Pack | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220FP | Standard | 520V | 1.15V @ 5A | 95ns | 5µA @ 520V | -65°C ~ 175°C | 5A | - | |||||
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ON Semiconductor | DIODE GEN PURP 520V 5A TO220AC | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 520V | 1.15V @ 5A | 95ns | 5µA @ 520V | -65°C ~ 175°C | 5A | - | |||||
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ON Semiconductor | DIODE GEN PURP 200V 20A TO220AC | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 200V | 1.1V @ 20A | 95ns | 50µA @ 200V | -65°C ~ 175°C | 20A | - | |||||
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ON Semiconductor | DIODE GEN PURP 200V 20A TO220AC | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 200V | 1.1V @ 20A | 95ns | 50µA @ 200V | -65°C ~ 175°C | 20A | - | |||||
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ON Semiconductor | DIODE GEN PURP 520V 5A TO220FP | TO-220-2 Full Pack | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220FP | Standard | 520V | 1.15V @ 5A | 95ns | 5µA @ 520V | -65°C ~ 175°C | 5A | - | |||||
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ON Semiconductor | DIODE GEN PURP 200V 20A TO220AC | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 200V | 1.1V @ 20A | 95ns | 50µA @ 200V | -65°C ~ 175°C | 20A | - | |||||
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STMicroelectronics | DIODE GEN PURP 600V 5A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DPAK | Standard | 600V | 1.3V @ 5A | 95ns | 5µA @ 600V | 175°C (Max) | 5A | - | |||||
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STMicroelectronics | DIODE GEN PURP 1.2KV 5A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | TURBOSWITCH™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DPAK | Standard | 1200V | 2.2V @ 5A | 95ns | 100µA @ 1200V | 150°C (Max) | 5A | - | |||||
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STMicroelectronics | DIODE GEN PURP 1.2KV 5A TO220FP | TO-220-2 Full Pack, Isolated Tab | TURBOSWITCH™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220FPAC | Standard | 1200V | 2.2V @ 5A | 95ns | 100µA @ 1200V | 150°C (Max) | 5A | - | |||||
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STMicroelectronics | DIODE GP 1.2KV 5A ISOWATT-220AC | ISOWATT220AC-3 | TURBOSWITCH™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | ISOWATT-220AC | Standard | 1200V | 2.2V @ 5A | 95ns | 100µA @ 1200V | 150°C (Max) | 5A | - | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 8A TO247AC | TO-247-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 1200V | 3.3V @ 8A | 95ns | 10µA @ 1200V | -55°C ~ 150°C | 8A | - | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 8A TO220AC | TO-220-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 1200V | 3.3V @ 8A | 95ns | 10µA @ 1200V | -55°C ~ 150°C | 8A | - |