Diodes, Rectifiers - Single - Star River Electronics

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21 products

PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Package / Case	Series	Packaging	Speed	Mounting Type	Part Status	Supplier Device Package	Diode Type	Voltage - DC Reverse (Vr) (Max)	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Current - Average Rectified (Io)	Capacitance @ Vr, F
TDA8083H/C1	Per Unit $201.8800	Send RFQ	PDF RFQ		GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 750MA TO257	TO-257-3	-	Tube	No Recovery Time > 500mA (Io)	Through Hole	Active	TO-257	Silicon Carbide Schottky	1200V	1.74V @ 750mA	0ns	10µA @ 1200V	-55°C ~ 250°C	750mA	66pF @ 1V, 1MHz
TDA8070M/A/C3	Per Unit $191.0100	Send RFQ	PDF RFQ		GeneSiC Semiconductor	DIODE SCHOTTKY 650V 750MA TO257	TO-257-3	-	Tube	No Recovery Time > 500mA (Io)	Through Hole	Active	TO-257	Silicon Carbide Schottky	650V	1.39V @ 750mA	0ns	5µA @ 650V	-55°C ~ 250°C	750mA	76pF @ 1V, 1MHz
P87C51FB-IA	Per Unit $201.8800	Send RFQ	PDF RFQ		GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 750MA TO257	TO-257-3	-	Tube	No Recovery Time > 500mA (Io)	Through Hole	Active	TO-257	Silicon Carbide Schottky	1200V	1.74V @ 750mA	0ns	10µA @ 1200V	-55°C ~ 250°C	750mA	66pF @ 1V, 1MHz
P87C51FB-4N	Per Unit $382.0200	Send RFQ	PDF RFQ	2,737 In-stock	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 750MA TO257	TO-257-3	-	Tube	No Recovery Time > 500mA (Io)	Through Hole	Active	TO-257	Silicon Carbide Schottky	650V	1.39V @ 750mA	0ns	5µA @ 650V	-55°C ~ 250°C	750mA	76pF @ 1V, 1MHz
MC13281FP	Per Unit $201.8800	Send RFQ	PDF RFQ		GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 750MA TO257	TO-257-3	-	Tube	No Recovery Time > 500mA (Io)	Through Hole	Active	TO-257	Silicon Carbide Schottky	1200V	1.74V @ 750mA	0ns	10µA @ 1200V	-55°C ~ 250°C	750mA	66pF @ 1V, 1MHz
MC13158F	Per Unit $191.0100	Send RFQ	PDF RFQ		GeneSiC Semiconductor	DIODE SCHOTTKY 650V 750MA TO257	TO-257-3	-	Tube	No Recovery Time > 500mA (Io)	Through Hole	Active	TO-257	Silicon Carbide Schottky	650V	1.39V @ 750mA	0ns	5µA @ 650V	-55°C ~ 250°C	750mA	76pF @ 1V, 1MHz
74LVT652PW	Per Unit $201.8800	Send RFQ	PDF RFQ		GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 750MA TO257	TO-257-3	-	Tube	No Recovery Time > 500mA (Io)	Through Hole	Active	TO-257	Silicon Carbide Schottky	1200V	1.74V @ 750mA	0ns	10µA @ 1200V	-55°C ~ 250°C	750mA	66pF @ 1V, 1MHz
74LVT652	Per Unit $191.0100	Send RFQ	PDF RFQ		GeneSiC Semiconductor	DIODE SCHOTTKY 650V 750MA TO257	TO-257-3	-	Tube	No Recovery Time > 500mA (Io)	Through Hole	Active	TO-257	Silicon Carbide Schottky	650V	1.39V @ 750mA	0ns	5µA @ 650V	-55°C ~ 250°C	750mA	76pF @ 1V, 1MHz
TDA3301B	Per Unit $201.8800	Send RFQ	PDF RFQ		GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 750MA TO257	TO-257-3	-	Tube	No Recovery Time > 500mA (Io)	Through Hole	Active	TO-257	Silicon Carbide Schottky	1200V	1.74V @ 750mA	0ns	10µA @ 1200V	-55°C ~ 250°C	750mA	66pF @ 1V, 1MHz
TDA2653A	Per Unit $191.0100	Send RFQ	PDF RFQ		GeneSiC Semiconductor	DIODE SCHOTTKY 650V 750MA TO257	TO-257-3	-	Tube	No Recovery Time > 500mA (Io)	Through Hole	Active	TO-257	Silicon Carbide Schottky	650V	1.39V @ 750mA	0ns	5µA @ 650V	-55°C ~ 250°C	750mA	76pF @ 1V, 1MHz
MOT3021	Per Unit $201.8800	Send RFQ	PDF RFQ		GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 750MA TO257	TO-257-3	-	Tube	No Recovery Time > 500mA (Io)	Through Hole	Active	TO-257	Silicon Carbide Schottky	1200V	1.74V @ 750mA	0ns	10µA @ 1200V	-55°C ~ 250°C	750mA	66pF @ 1V, 1MHz
MOC8107SR2V	Per Unit $191.0100	Send RFQ	PDF RFQ		GeneSiC Semiconductor	DIODE SCHOTTKY 650V 750MA TO257	TO-257-3	-	Tube	No Recovery Time > 500mA (Io)	Through Hole	Active	TO-257	Silicon Carbide Schottky	650V	1.39V @ 750mA	0ns	5µA @ 650V	-55°C ~ 250°C	750mA	76pF @ 1V, 1MHz
GTL2107	Per Unit $201.8800	Send RFQ	PDF RFQ		GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 750MA TO257	TO-257-3	-	Tube	No Recovery Time > 500mA (Io)	Through Hole	Active	TO-257	Silicon Carbide Schottky	1200V	1.74V @ 750mA	0ns	10µA @ 1200V	-55°C ~ 250°C	750mA	66pF @ 1V, 1MHz
GTL2010BS.118	Per Unit $191.0100	Send RFQ	PDF RFQ		GeneSiC Semiconductor	DIODE SCHOTTKY 650V 750MA TO257	TO-257-3	-	Tube	No Recovery Time > 500mA (Io)	Through Hole	Active	TO-257	Silicon Carbide Schottky	650V	1.39V @ 750mA	0ns	5µA @ 650V	-55°C ~ 250°C	750mA	76pF @ 1V, 1MHz
IDP06E60		Send RFQ	PDF RFQ		Infineon Technologies	DIODE GEN PURP 600V 14.7A TO220	TO-220-2	-	Tube	Fast Recovery =< 500ns, > 200mA (Io)	Through Hole	Obsolete	PG-TO220-2-2	Standard	600V	2V @ 6A	70ns	50µA @ 600V	-55°C ~ 175°C	14.7A (DC)	-
IDP04E120		Send RFQ	PDF RFQ		Infineon Technologies	DIODE GEN PURP 1.2KV 11.2A TO220	TO-220-2	-	Tube	Fast Recovery =< 500ns, > 200mA (Io)	Through Hole	Obsolete	PG-TO220-2-2	Standard	1200V	2.15V @ 4A	115ns	100µA @ 1200V	-55°C ~ 150°C	11.2A (DC)	-
SDT08S60		Send RFQ	PDF RFQ		Infineon Technologies	DIODE SCHOTTKY 600V 8A TO220-2	TO-220-2	CoolSiC™	Tube	No Recovery Time > 500mA (Io)	Through Hole	Obsolete	PG-TO220-2-2	Silicon Carbide Schottky	600V	1.7V @ 8A	0ns	300µA @ 600V	-55°C ~ 175°C	8A (DC)	280pF @ 0V, 1MHz
SDT12S60		Send RFQ	PDF RFQ		Infineon Technologies	DIODE SCHOTTKY 600V 12A TO220-2	TO-220-2	CoolSiC™	Tube	No Recovery Time > 500mA (Io)	Through Hole	Obsolete	PG-TO220-2-2	Silicon Carbide Schottky	600V	1.7V @ 12A	0ns	400µA @ 600V	-55°C ~ 175°C	12A (DC)	450pF @ 1V, 1MHz
SDT10S30		Send RFQ	PDF RFQ		Infineon Technologies	DIODE SCHOTTKY 300V 10A TO220-2	TO-220-2	CoolSiC™	Tube	No Recovery Time > 500mA (Io)	Through Hole	Obsolete	PG-TO220-2-2	Silicon Carbide Schottky	300V	1.7V @ 10A	0ns	200µA @ 300V	-55°C ~ 175°C	10A (DC)	600pF @ 0V, 1MHz
SDT06S60		Send RFQ	PDF RFQ		Infineon Technologies	DIODE SCHOTTKY 600V 6A TO220-2	TO-220-2	CoolSiC™	Tube	No Recovery Time > 500mA (Io)	Through Hole	Obsolete	PG-TO220-2-2	Silicon Carbide Schottky	600V	1.7V @ 6A	0ns	200µA @ 600V	-55°C ~ 175°C	6A (DC)	300pF @ 0V, 1MHz
SDT04S60		Send RFQ	PDF RFQ		Infineon Technologies	DIODE SCHOTTKY 600V 4A TO220-2	TO-220-2	CoolSiC™	Tube	No Recovery Time > 500mA (Io)	Through Hole	Obsolete	PG-TO220-2-2	Silicon Carbide Schottky	600V	1.9V @ 4A	0ns	200µA @ 600V	-55°C ~ 175°C	4A (DC)	150pF @ 0V, 1MHz

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