- Manufacture :
- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Sanken | DIODE GEN PURP 800V 300MA TO220 | TO-220-2 Full Pack | - | Tube | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-F2 | Standard | 800V | 1.05V @ 1A | 9µs | 10µA @ 800V | -20°C ~ 125°C | 300mA | - | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 4A TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 4A | 0ns | 20µA @ 650V | 175°C (Max) | 4A (DC) | 200pF @ 1V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 4A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.9V @ 4A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 4A (DC) | 150pF @ 0V, 1MHz | ||||
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Sanken | DIODE GEN PURP 800V 300MA TO220 | TO-220-2 Full Pack | - | Tube | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-F2 | Standard | 800V | 1.05V @ 1A | 9µs | 10µA @ 800V | -20°C ~ 125°C | 300mA | - |