- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE SCHOTTKY 650V 12A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 12A | 0ns | 240µA @ 600V | 175°C (Max) | 12A (DC) | 438pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 12A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 12A | 0ns | 240µA @ 600V | 175°C (Max) | 12A (DC) | 438pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA TO220 | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FP | Silicon Carbide Schottky | 3300V | 1.7V @ 300mA | 0ns | 5µA @ 3300V | -55°C ~ 175°C | 300mA | 42pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA TO220 | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FP | Silicon Carbide Schottky | 3300V | 1.7V @ 300mA | 0ns | 5µA @ 3300V | -55°C ~ 175°C | 300mA | 42pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA TO220 | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FP | Silicon Carbide Schottky | 3300V | 1.7V @ 300mA | 0ns | 5µA @ 3300V | -55°C ~ 175°C | 300mA | 42pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA TO220 | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FP | Silicon Carbide Schottky | 3300V | 1.7V @ 300mA | 0ns | 5µA @ 3300V | -55°C ~ 175°C | 300mA | 42pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA TO220 | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FP | Silicon Carbide Schottky | 3300V | 1.7V @ 300mA | 0ns | 5µA @ 3300V | -55°C ~ 175°C | 300mA | 42pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA TO220 | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FP | Silicon Carbide Schottky | 3300V | 1.7V @ 300mA | 0ns | 5µA @ 3300V | -55°C ~ 175°C | 300mA | 42pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA TO220 | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FP | Silicon Carbide Schottky | 3300V | 1.7V @ 300mA | 0ns | 5µA @ 3300V | -55°C ~ 175°C | 300mA | 42pF @ 1V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 12A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.7V @ 12A | 0ns | 400µA @ 600V | -55°C ~ 175°C | 12A (DC) | 450pF @ 1V, 1MHz |