Chat with us, powered by LiveChat
Build a global manufacturer and supplier trusted trading platform.
Voltage - DC Reverse (Vr) (Max) :
Voltage - Forward (Vf) (Max) @ If :
Reverse Recovery Time (trr) :
Current - Reverse Leakage @ Vr :
Operating Temperature - Junction :
Current - Average Rectified (Io) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Speed Mounting Type Part Status Supplier Device Package Diode Type Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F
BA18BCOW
Per Unit
$2.4900
RFQ
ROHM Semiconductor DIODE SCHOTTKY 650V 4A TO220-2 TO-220-2 - Tube No Recovery Time > 500mA (Io) Through Hole Active - Silicon Carbide Schottky 650V 1.5V @ 4A 0ns 20µA @ 650V 175°C (Max) 4A (DC) 200pF @ 1V, 1MHz
FDC642P-NL
RFQ
ON Semiconductor DIODE GEN PURP 1.2KV 10A TO220F TO-220-2 Full Pack - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-220F-2L Standard 1200V 3.5V @ 10A 100ns 10µA @ 1200V -65°C ~ 150°C 10A -
FFPF10U120STU
RFQ
ON Semiconductor DIODE GEN PURP 1.2KV 10A TO220F TO-220-2 Full Pack - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-220F-2L Standard 1200V 3.5V @ 10A 100ns 10µA @ 1200V -65°C ~ 150°C 10A -
Page 1 / 1