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Supplier Device Package :
Voltage - DC Reverse (Vr) (Max) :
Voltage - Forward (Vf) (Max) @ If :
Operating Temperature - Junction :
Current - Average Rectified (Io) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Speed Mounting Type Part Status Supplier Device Package Diode Type Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F
EDS5Z5.0T1G
Per Unit
$5.1100
RFQ
ON Semiconductor DIODE SCHOTTKY 1.2KV 8A TO220-2 TO-220-2 - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Active TO-220-2L Silicon Carbide Schottky 1200V 1.75V @ 8A - 200µA @ 1200V -55°C ~ 175°C 8A (DC) 538pF @ 1V, 100kHz
BYT12P-1000
RFQ
STMicroelectronics DIODE GEN PURP 1KV 12A TO220AC TO-220-2 - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-220AC Standard 1000V 1.9V @ 12A 155ns 50µA @ 1000V -40°C ~ 150°C 12A -
BYT08P-1000
RFQ
STMicroelectronics DIODE GEN PURP 1KV 8A TO220AC TO-220-2 - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-220AC Standard 1000V 1.9V @ 8A 155ns 35µA @ 1000V -40°C ~ 150°C 8A -
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