- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE GEN PURP 600V 20A TO220NFM | TO-220-3 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 2.8V @ 20A | 35ns | 10µA @ 600V | 150°C (Max) | 20A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 430V 20A TO220NFM | TO-220-3 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 430V | 1.6V @ 20A | 35ns | 10µA @ 430V | 150°C (Max) | 20A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 10A TO220NFM | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 1.7V @ 10A | 40ns | 10µA @ 600V | 150°C (Max) | 10A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 5A TO220NFM | TO-220-2 Full Pack, Isolated Tab | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | - | - | - | 150°C (Max) | 5A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 5A TO220NFM | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 2.8V @ 5A | 25ns | 10µA @ 600V | 150°C (Max) | 5A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 530V 20A TO220NFM | TO-220-3 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 530V | 2V @ 20A | 30ns | 10µA @ 530V | 150°C (Max) | 20A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 300V 20A TO220NFM | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 300V | - | - | - | 150°C (Max) | 20A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 20A TO220NFM | TO-220-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 1.55V @ 20A | 60ns | 10µA @ 600V | 150°C (Max) | 20A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 10A TO220NFM | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 2.5V @ 10A | 30ns | 10µA @ 600V | 150°C (Max) | 10A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 10A TO220NFM | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 2.8V @ 10A | 25ns | 10µA @ 600V | 150°C (Max) | 10A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 430V 10A TO220NFM | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 430V | - | - | - | 150°C (Max) | 10A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 20A TO220NFM | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 2.8V @ 20A | 35ns | 10µA @ 600V | 150°C (Max) | 20A | - | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz |