- Package / Case :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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2,737
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | |||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.5KV 10A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | TO-263AB | Standard | 1500V | 1.35V @ 6.5A | 220ns | 250µA @ 1500V | -55°C ~ 150°C | 10A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.5KV 6.5A TO263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | TO-263AB | Standard | 1500V | 1.3V @ 6.5A | 350ns | 250µA @ 1500V | -55°C ~ 150°C | 6.5A | - |